Density Functional Theory Calculations of Pinus brutia Derivatives and Its Response to Light in a Au/n-Si Device

Abstract

In this study, the performance of an organic dye obtained from the bark of the red pine (Pinus brutia) tree growing in Muğla/Turkey as an interface layer in the Au/n-Si Schottky diode (SD) structure was evaluated. For this purpose, at first, the optimized molecular structure, the highest occupied molecular orbital (HOMO), and the lowest unoccupied molecular orbital (LUMO) simulations of the organic dye were calculated by the Gauss program and it was theoretically proven that the dye exhibits semiconducting properties. Then, the electrical and photodiode variables such as ideality factor, effective barrier height, series resistance, interface states density distribution, photosensitivity, and photo responsivity were evaluated employing current-voltage measurements under dark and different illumination densities. Additionally, C-V measurements were used to demonstrate that the fabricated device has capacitive features and this capability varies as a function of the frequency. Under these measurements, the possible conduction mechanism for the organic dye-based Au/n-Si device was investigated and the results showed that Au/Pinus brutia/n-Si may be a good candidate for optoelectronic applications.

Photodiode behavior and capacitive performance of ZnO nanoflakes synthesized by electrochemical deposition

“…According to the TE method, the ideality factor and barrier height are determined in a linear region of the forward bias I-V characteristics. A detailed explanation of the calculation of these parameters using the TE method can be found in the literature [31,32]. Furthermore, the junction resistance (R j ) of the diodes is calculated with the dV/dI formula from the I-V data.…”

Development and characterization of self-powered, highly sensitive optoelectronic device based on PVA-rGO nanofibers/n-Si

“…The decrease in RR with increasing intensity can be explained by the increase in the reverse bias current while the forward bias current remains almost unchanged. Furthermore, the variation of η with intensity indicates that current mechanisms other than ideal thermionic emission, such as tunneling and recombination, may also be active in the device [60].…”

Morphological and electrical properties of Ag/p-type indium phosphide MIS structures with malachite green organic dyes

“…Ulusan et al [40] found that the N SS values varied from 5.6×10 13 eV −1 cm −2 to 2.0×10 12 eV −1 cm −2 for Au/Si 3 N 4 /p-GaAs junction. Yilmaz et al [41] reported that Nss values decreased from 4.268 × 10 15 eV −1 cm −2 to 1.587 × 10 15 eV −1 cm −2 in the dark condition for Au/Pinus brutia/n-Si MIS diode. The N ss values of interfacial state concentration of the Ag/MG/p-InP MIS contact is coherent with those of above indicated works.…”

“…The N ss values of interfacial state concentration of the Ag/MG/p-InP MIS contact is coherent with those of above indicated works. The MG film layer results in a significant alteration of interface state that the MIS interface is sharp and passive [41][42][43]. The MG interlayer raises the BH by the alteration of the crystal substrate surfaces and the chemical interactions at the MIS interfacial region.…”