A microscopic investigation of first-principles electron densities of ␥-A 3 N 4 ͑A:C,Si,Ge͒ spinels reveals a clear relationship between the compressibility and the chemical bonding of these materials. Three striking findings emanate from this analysis: ͑i͒ the chemical graph is governed by a network of highly directional strong bonds with covalent character in ␥-C 3 N 4 and different degrees of ionic polarization in ␥-Si 3 N 4 and ␥-Ge 3 N 4 , ͑ii͒ nitrogen is the lowest compressible atom controlling the trend in the bulk modulus of the solids, and ͑iii͒ the group-IV counterions show strong site dependent compressibilities enhancing the difficulty in the synthesis of the spinel phases of these nitrides.