2013
DOI: 10.1063/1.4837475
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Density of state effective mass and related charge transport properties in K-doped BiCuOSe

Abstract: We report the enhanced p-type conduction properties in BiCuOSe by doping of monovalent ions (K+). As compared with undoped BiCuOSe, simultaneous increase in both the carrier concentration and the Hall mobility was achieved in the K-doped BiCuOSe. The origin of the enhancement was discussed in terms of the two-band structure in the valence band of the BiCuOSe, and the density of state effective masses of the heavy (∼1.1 me) and light hole (∼0.18 me) were estimated by using Pisarenko relation.

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Cited by 71 publications
(20 citation statements)
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“…LiCoO 2 , BiCuOSe). 6,[15][16][17][18] Figures 1a and 1b show two example crystal structures of well-known vdW layered materials. Although individual structures have been known for decades, the classification and large-scale compilation of vdW layered structures came surprisingly late.…”
Section: Introductionmentioning
confidence: 99%
“…LiCoO 2 , BiCuOSe). 6,[15][16][17][18] Figures 1a and 1b show two example crystal structures of well-known vdW layered materials. Although individual structures have been known for decades, the classification and large-scale compilation of vdW layered structures came surprisingly late.…”
Section: Introductionmentioning
confidence: 99%
“…When unintentionally doped, they are moderate band gap semiconductors (E g ~0.8 eV, in the case of BiCuSeO), and they exhibit only moderate electrical conductivity values (σ~10 S·cm −1 in the case of BiCuSeO at room temperature) with p-type conduction [8,9,10]. However, they can be very easily p-type doped by substituting Bi 3+ with a 2+ (Ba 2+ , Ca 2+ , Pb 2+ or Sr 2+ ) [9,10,11,12,13,14,15,16] or a 1+ (K + or Na + ) [17,18] element, or by the controlled introduction of copper vacancies [19]. This doping leads to a simultaneous decrease of the electrical resistivity and the Seebeck coefficient [9], and the thermoelectric power factor, defined as PF = S 2 /ρ (with S as the Seebeck coefficient and ρ the electrical resistivity), reaches about 0.7 × 10 −3 W·m −1 ·K −2 in optimally doped samples [11].…”
Section: Introductionmentioning
confidence: 99%
“…Recently, layered BiCuOSe has attracted considerable interests in TE applications, because it exhibits very low intrinsic thermal conductivity 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 . In the past few years, significant effort has been made to improve the ZT value of BiCuOSe.…”
mentioning
confidence: 99%