“…When unintentionally doped, they are moderate band gap semiconductors (E g ~0.8 eV, in the case of BiCuSeO), and they exhibit only moderate electrical conductivity values (σ~10 S·cm −1 in the case of BiCuSeO at room temperature) with p-type conduction [8,9,10]. However, they can be very easily p-type doped by substituting Bi 3+ with a 2+ (Ba 2+ , Ca 2+ , Pb 2+ or Sr 2+ ) [9,10,11,12,13,14,15,16] or a 1+ (K + or Na + ) [17,18] element, or by the controlled introduction of copper vacancies [19]. This doping leads to a simultaneous decrease of the electrical resistivity and the Seebeck coefficient [9], and the thermoelectric power factor, defined as PF = S 2 /ρ (with S as the Seebeck coefficient and ρ the electrical resistivity), reaches about 0.7 × 10 −3 W·m −1 ·K −2 in optimally doped samples [11].…”