1986
DOI: 10.1016/0039-6028(86)90976-3
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Density of states in Landau level tails of GaAsAlxGa1−xAs heterostructures

Abstract: From an analysis of the thermally activated resistivity as a function of the magnetic field in the quantum Hall regime we deduced the position of the Fermi energy in the mobility gap as a function of the filling factor and therefore the density of states. The measured density of states is best described by a Gaussian like profile superimposed on a constant background.

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Cited by 37 publications
(33 citation statements)
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“…As a rule, an assumption is used that the delocalized states with discrete energies Е = Е N are separated by the (mobility) gap Δ >> k B T, that leads to an expression [3][4][5]:…”
Section: Activation Energiesmentioning
confidence: 99%
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“…As a rule, an assumption is used that the delocalized states with discrete energies Е = Е N are separated by the (mobility) gap Δ >> k B T, that leads to an expression [3][4][5]:…”
Section: Activation Energiesmentioning
confidence: 99%
“…The DOS in mobility gaps may be evaluated from the data on activation energy E A as a function of the LL filling factor ν [3][4][5][6]. As / B n n ν = (n is the electron density, B n = / eB hc = is the degree of LL degeneracy), the filling factor can be tuned by the change of either a carrier density [3] or a magnetic field [4][5][6].…”
Section: Density Of States In Mobility Gapsmentioning
confidence: 99%
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