1996
DOI: 10.1103/physrevlett.77.3173
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Density of States in Quasicrystals and Approximants: Tunneling Experiment on Bare and Oxidized Surfaces

Abstract: Tunneling spectroscopy studies on oxidized and bare surfaces of icosahedral i-AlPdRe, i-AlCuFe, and approximant a-AlMnSi phases reveal specific features of the density of states (DOS) close to the Fermi level as compared to the crystalline nonapproximant v-AlCuFe phase. The Fermi energy lies in the middle of a narrow pseudogap of about 50 meV width. For higher energies, the DOS exhibits a square root energy dependence attributed to electron-electron interaction effects. The DOS differs from the linear muffin t… Show more

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Cited by 92 publications
(66 citation statements)
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“…[2][3][4][5] There is a growing body of theoretical and experimental evidence that the fundamental reason for the formation of quasicrystalline order is the presence of a pseudogap around the Fermi level. [6][7][8][9][10] However, the electronic contribution to the specific heat in Zn-Mg-Y was reported to be similar to Zn metal, indicating no reduction of the density of states (DOS) at E F , 4 although in the same work a distinct feature that was assigned to an excitation across a pseudogap was observed from optical conductivity study. 4 It was also reported 11 that their resistivity (150-200 µΩ-cm) is an order of magnitude lower than Al-based quasicrystals such as Al-Pd-Mn 12 or highly conducting compositions of Al-Pd-Re, 13 again pointing towards a higher DOS at E F in the former.…”
Section: Introductionmentioning
confidence: 72%
“…[2][3][4][5] There is a growing body of theoretical and experimental evidence that the fundamental reason for the formation of quasicrystalline order is the presence of a pseudogap around the Fermi level. [6][7][8][9][10] However, the electronic contribution to the specific heat in Zn-Mg-Y was reported to be similar to Zn metal, indicating no reduction of the density of states (DOS) at E F , 4 although in the same work a distinct feature that was assigned to an excitation across a pseudogap was observed from optical conductivity study. 4 It was also reported 11 that their resistivity (150-200 µΩ-cm) is an order of magnitude lower than Al-based quasicrystals such as Al-Pd-Mn 12 or highly conducting compositions of Al-Pd-Re, 13 again pointing towards a higher DOS at E F in the former.…”
Section: Introductionmentioning
confidence: 72%
“…The formation of a pseudogap near the Fermi level (E F ) has been related to a Fermi surface-quasi Brillouin zone interaction mechanism. 1,2 An increasing body of evidence has supported this notion 3,4 indicating the presence of a pseudogap in the bulk, while the surface may behave differently. 5,6 The bulk electronic structure of quasicrystals recently studied by hard x-ray photoelectron spectroscopy demonstrates presence of a pseudogap.…”
Section: Introductionmentioning
confidence: 95%
“…1͒ agrees well with the experimental results obtained from tunneling and point contact spectroscopy measurements, where the presence of a dip feature of small width ͑20-60 meV͒, superimposed onto a broad ͑0.5-1 eV͒ asymmetric pseudogap, has been reported. 23,[31][32][33] Thus, Eq. ͑2͒ satisfactorily describes the electronic structure of these alloys in terms of a wide Lorentzian peak ͑related to the Fermi surface-Brillouin zone interaction͒ plus a narrow Lorentzian peak ͑related to sp-d hybridization effects͒.…”
Section: ͑2͒mentioning
confidence: 99%