2014
DOI: 10.12693/aphyspola.125.174
|View full text |Cite
|
Sign up to set email alerts
|

Density of States in Thin Boron-Doped Microcrystalline Silicon Films Estimated from the Thermally Stimulated Conductivity Method

Abstract: In this work, a series of boron-doped microcrystalline silicon samples [µc-Si:H(B)] were deposited by plasma--enhanced chemical vapor deposition, using silane (SiH4) diluted in hydrogen, and diborane (B2H6) as a dopant gas. The concentration of B2H6 in SiH4 was varied in the range of 0100 ppm. The density of states was obtained from the thermally stimulated conductivity technique and compared with results obtained by the modulated photoconductivity methods. To explain the poor agreement between the density of … Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

0
0
0

Publication Types

Select...

Relationship

0
0

Authors

Journals

citations
Cited by 0 publications
references
References 13 publications
0
0
0
Order By: Relevance

No citations

Set email alert for when this publication receives citations?