The local gas-flow behavior is almost unknown for low pressure plasma systems, except parallel plate reactors for semiconductor purposes. To overcome this lack of knowledge, this study starts with the influence investigation of the gas feed-in systems technical layout on the homogeneity of the gas supply for large volume plasma enhanced chemical vapor deposition (PECVD) chambers. Computational fluid dynamics (CFD) simulations are used as a tool to determine velocity and pressure distribution inside the gas feed-in pipe as well as in the PECVD-chamber itself. The parameters varied were: flow rate, pipe length, number of holes, hole diameter and aspect ratio of the pipe section. The calculated pressure values are compared with the experimentally measured ones to validate the simulation results. An excellent conformity of the calculated and measured pressures is observed. With the aim to evaluate the homogeneity of gas distribution through the pipe holes the nonuniformity coefficient (Φ) was created. The results show the influence of each layout parameter in the homogeneity of the gas distribution. Hence in future correct technical layouts of gas feed-in systems can easily be applied. With these results construction guidelines has been formulated.