Denuded zone formation by conventional and rapid thermal anneals

The effect of the ramping rate on oxygen precipitation and the denuded zone in heavily doped Czochralski silicon

“…Moreover, it can be seen that the DZ width in both HB1 and LB increased with increasing ramping rate. This result is in accord with Kissinger et al [24][25][26]. So the above results indicate that the DZ width depends more on the annealing than the impurity concentration during the ramping.…”

Vacancy self-trapping during rapid thermal annealing of silicon wafers

“…3,4 It has been elegantly demonstrated that relatively straightforward manipulation of vacancy populations by rapid thermal annealing ͑RTA͒ of Czochralski-grown wafers can be used to precisely tailor the distribution of oxide precipitates in order to create a "denuded zone" near the wafer surface ͑corresponding to low vacancy concentration͒ while producing a high precipitate density in the wafer bulk ͑high vacancy concentration͒. 5,6 This profile results from the combination of point defect diffusion to and from the wafer surface and point defect recombination in the wafer bulk.…”

Oxygen precipitation kinetics of Czochralski silicon preannealed under high pressure

“…In modern integrated circuit device processes, the defect-free zone close to the Czochralski (Cz) silicon wafer surface, named the denuded zone (DZ), becomes increasingly important for device yield [1,2]. In general, in the first-step hightemperature annealing, interstitial oxygen in the region near the surface out-diffuses and grown-in oxygen precipitates dissolve, so that no oxygen precipitates can be generated and grow in the following low-and high-temperature treatments [3,4].…”