Dependence of dark current and photoresponse on polarization charges for AlGaN‐based heterojunction p–i–n photodetectors

Abstract

The influence of the polarization charges on the properties of AlGaN‐based heterojunction p–i–n ultraviolet photodetectors was investigated. It is found that the polarization charges at the hetero‐interface can enhance the electric field intensity and result in an increased dark current. On the contrary, the polarization charges can lower the photoresponse because the direction of polarization electric field is opposite to the applied electric field in the light absorption layer.

High‐Performance AlGaN‐Based Solar‐Blind UV Photodetectors for Sensing Applications

“…The sample was then treated by a photoelectrochemical method to recover the damage made by ICP etching and reduce its leakage current. [22] Finally, around and on top of the mesa, a ring-like Ti/Al/Ni/Au (30/100/20/200 nm) multilayer electrode and a Ni/Au (30/300 nm) circular electrode were deposited by e-beam evaporation in sequence. The whole device was rapidly annealed under N 2 atmosphere at 700 C for 60 s to reduce the p-and n-type contact resistances.…”

Current–voltage characteristics and photovoltaic effect of a Au/ZnFe2O4/GaN Schottky junction

“…Gallium nitride (GaN) has attracted huge research interest due to its potential application in high-frequency, high-power, and optoelectronic devices [1,2]. Its distinctive properties such as wide band gap (∼3.4 eV), high breakdown field strength, and good thermal conductivity have allowed it to be exploited in the development of ultraviolet (UV) photodetectors, lightemitting diodes, metal-oxide-semiconductor field-effect transistors and capacitors, and high-electron-mobility transistors [3][4][5][6][7][8][9]. Metal-semiconductor (MS) Schottky junctions based on GaN have frequently displayed an anomalous leakage current under reverse bias voltages and a low breakdown voltage, resulting in poor device performance, poor thermal stability, and degradation of diode behavior [10][11][12].…”