Dependence of deposition characteristics by copper chemical vapor deposition on gas flow shape

Abstract

When copper interconnection is applied in practical ULSI devices, it is required to fill holes and trenches with high aspect ratios with copper. A high deposition rate of 100 nm/min as well as complete gap filling at an aspect ratio of 3 was obtained in deposition of copper by chemical vapor deposition. We evaluated three types of CVD chamber configuration. In this work, the deposition rate and the filling property were found to be regulated by the gas velocity very near the substrate surface. High‐speed gas flow over the substrate surface can be realized with a suitable chamber configuration, which results in high deposition rate, good uniformity, and a high consumption rate of the source. © 2000 Scripta Technica, Electron Comm Jpn Pt 2, 83(6): 1–7, 2000