Dependence of device characteristics on quantum well thickness in ZnSe/ZnCdSe multi-quantum well blue-green laser diodes

Operation voltage reduction in ZnSe-based light-emitting diodes due to the use of n-type AlGaAs and CdZnSe buffer regions

“…However, our recent work 4 on the barriers between p-type ZnSe and metallic contacts suggested that the offsets are at least half that expected from past work and, on extrapolation, this suggested that the offset in the conduction band between GaAs and ZnSe is at least 0.6 eV. Such a 0.6 eV offset is not trivial and at least one group, Tomomura et al, 5 have reported that highly doping ͑10 19 cm Ϫ3 ͒ the n-type ZnSe grown adjacent to the GaAs substrates results in lower device operating voltages. However, such high chlorine doping results in the formation of poor interfaces and poor ZnSe crystallinities.…”

Electrical properties at p-ZnSe/metal interfaces

“…16 Thickness of the p-ZnSe layers was ~1.0 µm, and the N A -N D value was determined to be 3~4 × 10 17 cm -3 from the C-V measurement. The details of p-ZnSe growth were described elsewhere.…”

“…Since the p-ZnSe epilayers were grown at temperatures below 350°C, 16 the highest annealing temperature allowed is 350°C. Since the p-ZnSe epilayers were grown at temperatures below 350°C, 16 the highest annealing temperature allowed is 350°C.…”