Dependence of Electrical Characteristics on Epitaxial Layer Structure of AlGaN/GaN HEMTs Fabricated on Freestanding GaN Substrates

Ando, Yasuhisa; Makisako, Ryutaro; Takahashi, H.; Wakejima, Akio; Suda, Jun

doi:10.1109/ted.2021.3126270

Cited by 20 publications

(12 citation statements)

References 44 publications

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“…The epitaxial stack used and the conduction band bending at the interface leading to the 2DEG channel formation is depicted in Fig. (1). The device has been simulated using NEWTON method in SILVACO ATLAS TCAD.…”

Section: Simulation: Methods and Modelsmentioning

confidence: 99%

“…ALLIUM nitride electronics has gained huge attention in recent years due to its inherent advantages of the wide band gap material and Two-Dimensional Electron Gas (2DEG) formation when an AlGaN/GaN heterojunction is grown [1,2]. High frequency power electronics, optical and sensing technology are the three main application domains of GaN based devices [3][4][5][6].…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

GaN-HEMT on Si as a Robust Visible-Blind UV Detector With High Responsivity

Varghese

Eblabla

et al. 2022

IEEE Sensors J.

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Section: Simulation: Methods and Modelsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

GaN-HEMT on Si as a Robust Visible-Blind UV Detector With High Responsivity

Varghese

Eblabla

et al. 2022

IEEE Sensors J.

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“…The fabrication of HEMT wafers is described in detail in ref. [18]. The HEMT device used to fabricate the through‐hole electrode in this study has a gate length of 2 μm.…”

Section: Setup Of Uv Laser Drilling Experimentsmentioning

confidence: 99%

Metal Stop Laser Drilling for Blind via Holes of GaN‐on‐GaN Devices

Sasaoka

Ando

Takahashi

et al. 2023

Physica Status Solidi (a)

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The metal stop laser drilling of GaN‐on‐GaN devices is demonstrated using a UV sub‐nanosecond laser as a light source. By monitoring the Bremsstrahlung emission at the drilling point, metal stops with a precision higher than 1 μm are realized for vias with a depth of 100 μm. From in situ laser‐induced breakdown spectroscopy measurements, it is shown that endpoint detection is realized with high signal‐to‐noise ratio owing to the difference in the emission process between the strongly excited semiconductor and the metal. Herein, a through‐substrate electrode with a resistance of less than 5 mΩ on GaN‐on‐GaN high‐electron‐mobility transistor (HEMT) wafers is demonstrated. The fabrication of through‐substrate electrodes by this technique provides a simple process that does not require lithography or other complex processes. This process is expected to be useful in the fabrication of future GaN‐on‐GaN devices, including very thin GaN‐on‐GaN HEMTs.

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“…[1,2] As well recognized, the current progress of GaN HEMTs is based on the epitaxial growth technology of nitride heterostructures on to single-crystal (SC) substrates such as sapphire, semi-insulating (SI) SiC, [3,4] Si, [5] and GaN. [6,7] In addition to those, we consider AlN as another promising candidate for a substrate material of GaN HEMTs. First, AlN is an ultrawide bandgap (6.2 eV) nitride semiconductor having the wurtzite-type structure as a stable phase in the same way as that of GaN, which may allow the pseudomorphic crystal growth of GaN HEMT structures.…”

Section: Introductionmentioning

confidence: 99%

DC and Pulse I–V Characteristics of Strain‐Engineered AlGaInN/GaN HEMTs fabricated on Single‐Crystal AlN Substrate

Miyoshi

Tanaka

Kawaide

et al. 2023

Physica Status Solidi (a)

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A high‐electron‐mobility transistor (HEMT) structure consisting of a strain‐engineered quaternary AlGaInN barrier layer on an unintentionally doped (UID) GaN channel layer is grown on a single‐crystal (SC) AlN substrate by metal–organic chemical vapor deposition and subjected to the device fabrication and characterization. It is showed in DC static measurement results that the fabricated HEMTs exhibit good current–voltage (I–V) characteristics without large negative resistance even at high‐current operations. Pulse I–V measurements results indicate that the fabricated devices show a low‐drain–current collapse as unpassivated GaN HEMTs and that it is further improved by applying an Al2O3 surface passivation. The present results signify promising prospects of AlGaInN/GaN HEMTs on SC‐AlN toward future high‐power radio‐frequency (RF) applications.

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Dependence of Electrical Characteristics on Epitaxial Layer Structure of AlGaN/GaN HEMTs Fabricated on Freestanding GaN Substrates

Cited by 20 publications

References 44 publications

GaN-HEMT on Si as a Robust Visible-Blind UV Detector With High Responsivity

GaN-HEMT on Si as a Robust Visible-Blind UV Detector With High Responsivity

Metal Stop Laser Drilling for Blind via Holes of GaN‐on‐GaN Devices

DC and Pulse I–V Characteristics of Strain‐Engineered AlGaInN/GaN HEMTs fabricated on Single‐Crystal AlN Substrate

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