Dependence of ferromagnetic properties on growth oxygen partial pressure in boron-doped ZnO thin films

Yang, Hongxun; Xu, Xiaoguang; Zhou, Xiaoye; Dong, Jing; Wang, Tianqi; Miao, Jinshui; Jiang, Yong

doi:10.1007/s10853-012-6528-6

Cited by 12 publications

(4 citation statements)

References 24 publications

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“…It has a direct and wide band gap in which the value is 3.37 eV at room temperature and increases to be about 3.44 eV at 4.2 K. This property makes ZnO transparent in visible light and enables optoelectronic applications in blue and ultraviolet region, such as light emitting devices, laser diodes and photosensors [ 2 ]. Additionally, the large free-exciton binding energy of 60 meV in ZnO, compared with 25 meV in GaN, is of interest to achieve excitonic stimulated emission for the realization of low-threshold lasers at or even above room temperature [ 3 , 4 ]. One interesting feature of ZnO is the ability of bandgap engineering by its alloying with CdO ( E g = 2.3 eV) or MgO ( E g ~ 7.7 eV).…”

Section: Introductionmentioning

confidence: 99%

“…The Group III elements may exist as interstitials instead of substituting the Zn atoms in the host lattice [ 1 ]. Recently, ZnO-based diluted magnetic semiconductors showed ferromagnetism in ZnO by doping with boron or a transition metal, which is promising to achieve practical Curie temperature for future spintronic devices [ 3 , 4 ]. In addition, transparent boron-doped ZnO (ZnO:B) films sandwiched between two tungsten electrodes showed memristive behavior, which is attractive to overcome the physical limitations of traditional Flash memory for the next generation nonvolatile memory applications [ 10 ].…”

Section: Introductionmentioning

confidence: 99%

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Trap Exploration in Amorphous Boron-Doped ZnO Films

Chiu

Chiang

2015

Materials

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This paper addresses the trap exploration in amorphous boron-doped ZnO (ZnO:B) films using an asymmetric structure of metal-oxide-metal. In this work, the structure of Ni/ZnO:B/TaN is adopted and the ZnO:B film is deposited by RF magnetron sputtering. The as-deposited ZnO:B film is amorphous and becomes polycrystalline when annealing temperature is above 500 °C. According to the analysis of conduction mechanism in the as-deposited ZnO:B devices, Ohmic conduction is obtained at positive bias voltage because of the Ohmic contact at the TaN/ZnO:B interface. Meanwhile, hopping conduction is obtained at negative bias voltage due to the defective traps in ZnO:B in which the trap energy level is lower than the energy barrier at the Ni/ZnO:B interface. In the hopping conduction, the temperature dependence of I-V characteristics reveals that the higher the temperature, the lower the current. This suggests that no single-level traps, but only multiple-level traps, exist in the amorphous ZnO:B films. Accordingly, the trap energy levels (0.46–0.64 eV) and trap spacing (1.1 nm) in these multiple-level traps are extracted.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Trap Exploration in Amorphous Boron-Doped ZnO Films

Chiu

Chiang

2015

Materials

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“…In addition, the large exciton binding energy of 60 meV of ZnO is of interest to achieve excitonic stimulated emission for the realization of low-threshold lasers at room temperature and even higher temperatures. Recently, ZnO-based diluted magnetic semiconductors showed ferromagnetism in ZnO by doping with boron or a transition metal, which appears promising to achieve practical Curie temperature for future spintronic devices [ 4 , 5 ].…”

Section: Introductionmentioning

confidence: 99%

Conduction Mechanisms in Resistance Switching Memory Devices Using Transparent Boron Doped Zinc Oxide Films

Chiu

2014

Materials

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In this work, metal/oxide/metal capacitors were fabricated and investigated using transparent boron doped zinc oxide (ZnO:B) films for resistance switching memory applications. The optical band gap of ZnO:B films was determined to be about 3.26 eV and the average value of transmittance of ZnO:B films was about 91% in the visible light region. Experimental results indicated that the resistance switching in the W/ZnO:B/W structure is nonpolar. The resistance ratio of high resistance state (HRS) to low resistance state (LRS) is about of the order of 105 at room temperature. According to the temperature dependence of current-voltage characteristics, the conduction mechanism in ZnO:B films is dominated by hopping conduction and Ohmic conduction in HRS and LRS, respectively. Therefore, trap spacing (1.2 nm) and trap energy levels in ZnO:B films could be obtained.

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“…One can obtain an n-type ZnO structure through replacing the Zn atoms by group-III dopants. It was examined experimentally (see, for instance, [34] and [35] for Ga doped and B doped ZnO, respectively) and theoretically using first principles calculations (see [36], [37] and [38] for Al, Ga and B doped ZnO, respectively). A very low group-III dopant concentration can lead to semiconductor-metal transition [39].…”

Section: Introductionmentioning

confidence: 99%

Electronic Structure Properties of Doped and Imperfect ZnO Sheets

Çalışkan

Güner

Gürbüz

2016

IEEE Trans. Nanotechnology

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Employing first principles calculations, we examined doped and imperfect ZnO sheets to reveal the electronic structure properties. We mainly investigated the imperfect sheets arising from the host atom vacancies and doped structures where group-III (Al, B, Ga) atoms were substitutionally placed. The energy band gap and electronic behavior were addressed. We revealed and confirmed that group-III dopants and a particular host atom vacancy played an essential role in the electronic structure behavior of a ZnO sheet. We observed that a Zn or O vacancy modified enormously the band gap of a ZnO sheet and that a single dopant in the supercell resulted in semiconductor-metal transition. Zero bias conductance of a group-III doped ZnO sheet was found to be sensitive to any group-III dopant when it replaced the O atom, implying the substantial role of the dopant plus a certain host atom vacancy in the principle electronic feature of a ZnO sheet.

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Dependence of ferromagnetic properties on growth oxygen partial pressure in boron-doped ZnO thin films

Cited by 12 publications

References 24 publications

Trap Exploration in Amorphous Boron-Doped ZnO Films

Trap Exploration in Amorphous Boron-Doped ZnO Films

Conduction Mechanisms in Resistance Switching Memory Devices Using Transparent Boron Doped Zinc Oxide Films

Electronic Structure Properties of Doped and Imperfect ZnO Sheets

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