Dependence of GaN HEMT Millimeter-Wave Performance on Temperature

Darwish, Ali; Huebschman, Benjamin D.; Viveiros, Edward; Hung, H. Alfred

doi:10.1109/tmtt.2009.2034050

Cited by 66 publications

(31 citation statements)

References 12 publications

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“…12,13 Since temperature rise of a power transistor is mainly dependent on the thermal conductivity of internal material, the application of high thermal conductivity diamond material can reduce device thermal resistance remarkably, making device more cooler, reliable and efficient even at increased power dissipation.…”

Section: Thermal Analysis Setup and Resultsmentioning

confidence: 99%

Performance Comparison of GaN HEMTs on Diamond and SiC Substrates Based on Surface Potential Model

Zhou³

et al. 2017

ECS J. Solid State Sci. Technol.

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In this paper, the performance difference of AlGaN/GaN high-electron mobility transistors (HEMTs) with same epitaxial structure fabricated silicon carbide (SiC) and transferred to diamond substrate is examined based on the surface-potential (SP) model. The thermal resistances of these devices are extracted through finite element method (FEM) thermal analysis. Results show that GaN-ondiamond device has a lower thermal resistance than conventional GaN-on-SiC device, which demonstrates the thermal performance improvement of GaN-on-Diamond technology. By embedding thermal characteristic into carrier mobility in the conventional SP model, the effectiveness of model is validated through good agreement between simulation and measurements of DC and RF performance. Additionally, large-signal performance (output power P out , power added efficiency P AE and Gain) on these two similar devices are compared under identical bias and temperature conditions based on the improved SP model, making this work be effective for improving the process of GaN-on-Diamond HEMTs. The excellent performance of GaN materials including wide bandgap, high thermal conductivity, high electron saturation drift velocity makes it very suitable for the development of highfrequency, high-power microwave and millimeter-wave device and circuit applications.1,2 SiC material is presently a major choice to implement high-performance GaN HEMT due to its high thermal conductivity that is an order of magnitude greater than that of other materials such as sapphire. However, the heat dissipation issue appears more and more prominent with the development to direction of smaller size, greater output power and higher frequency. Therefore, to solve the degradation of device performance and reliability caused by heat dissipation, it is of utmost importance to reduce thermal resistance to get good thermal management. [3][4][5] Recently, GaN HEMT devices fabricated on diamond substrate (GaN-on-diamond) have been developed 6,7 due to its high thermal conductivity (2000 W/m · K) that is three to four times that of SiC. The application of diamond substrate can significantly reduce the temperature rise of device, which is expected to solve the performance degeneration under conditions of high bias and power drive. [8][9][10] Accurate device model, especially physical model, is essential for predicting device performance and guiding process development. This paper discusses the comparison result of performance between GaN HEMTs fabricated on SiC and diamond substrates based on the SP model. The paper is organized as follows. In Device structure and fabrication section, the structure and fabrication process of GaN-onDiamond HEMTs are described in detail. Then the 3D FEM model and SP model are described briefly in Thermal analysis setup and results section and SP model description for following performance verification and discussion in RF Performance verification section. Finally, Conclusion section is the conclusion. Device Structure and FabricationThe cross-section view o...

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Section: Thermal Analysis Setup and Resultsmentioning

confidence: 99%

Performance Comparison of GaN HEMTs on Diamond and SiC Substrates Based on Surface Potential Model

Zhou³

et al. 2017

ECS J. Solid State Sci. Technol.

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“…Over the years, many studies have been carried out to identify the bias regions in which the transistor behavior is temperature insensitive. 8,17,[50][51][52][53][54] It has been shown that CZTC and GZTC points are inherent in any field-effect transistor (FET) technology (eg, GaAs MESFETs, 50 Si LDMOSFETs, 51 Si MOSFETs, 52,53 GaAs HEMTs, 8,17 and GaN HEMTs 54 ), owing to the counterbalancing of temperature-dependent effects contributing in opposite ways. From a physical point of view, the two-opposite temperature-dependent effects counteracting with each other are the degradation of the electron transport properties and the shift of V T towards more negative values with increasing temperature.…”

Section: Introductionmentioning

confidence: 99%

Experimental insight into the temperature effects on DC and microwave characteristics for a GaAs pHEMT in multilayer 3‐D MMIC technology

Alim

Rezazadeh

Crupi

2020

Int J RF Microw Comput Aided Eng

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This paper is focused on studying the behavior of a GaAs pseudomorphic high electron mobility transistors (pHEMT) with respect to the temperature. The tested pHEMT is realized using the multilayer three‐dimensional (3‐D) monolithic microwave integrated circuit (MMIC) technology. The analysis is based on temperature‐dependent on‐wafer measurements carried out from 298 K to 373 K. The experiments consist of DC characteristics and scattering parameters in the broad frequency range from 45 MHz to 40 GHz. The effect of the temperature on the measured transistor performance is analyzed in detail and then, to gain a better insight and understanding of the device behavior, the achieved measurements are used for extraction and validation of a small‐signal equivalent‐circuit model for different temperature conditions. This study shows that, by heating the studied device, the observed performance variations depend remarkably on the selected bias condition. In particular, the output current and transconductance are degraded at higher gate‐source voltage and improved as the transistor is driven towards the pinch‐off. This is due to the counterbalancing of temperature‐dependent effects contributing in opposite ways to the resultant behavior of the transistor. Therefore, depending on the given application, an appropriate selection of the bias and temperature conditions is essential to guarantee adequate transistor performance.

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“…Therefore, an AlGaN/GaN HEMT can maintain much higher current density than other III–V group HEMTs. It is an established fact that change in temperature causes a change in the performance of the device, so an accurate knowledge of temperature dependent performance of the device is essential for its optimal use, especially in harsh environments . An improved knowledge of temperature dependent small signal equivalent circuit would play a key role in determining the device operating capabilities especially at high power and frequency .…”

Section: Introductionmentioning

confidence: 99%

“…It is an established fact that change in temperature causes a change in the performance of the device, so an accurate knowledge of temperature dependent performance of the device is essential for its optimal use, especially in harsh environments. 4,5 An improved knowledge of temperature dependent small signal equivalent circuit would play a key role in determining the device operating capabilities especially at high power and frequency. [6][7][8] Different models have been developed so far to predict the temperature based performance of the device but, either they are too complex to handle or their accuracy deteriorates with increasing values of temperature.…”

Section: Introductionmentioning

confidence: 99%

An improved temperature dependent analytical model to predict AlGaN/GaN high electron mobility transistors AC characteristics

Khan

Ahmed

Rehman

2019

Int J Numerical Modelling

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In this paper, an improved temperature dependent model has been presented to predict AC characteristics of submicron AlGaN/GaN high electron mobility transistors (HEMTs). The model evaluates effects of channel temperature on the device AC intrinsic parameters. It has been shown that the rise of channel temperature is almost linear in nature, and it depends upon both the ambient temperature as well as on the operating voltages of the device. By reassessing two dimensional electron gas (2‐DEG) carrier concentration, ns, high electron mobility transistor (HEMT)'s analytical I−V equations for both linear as well as saturation regions have been modified. The modeled DC characteristics showed a good degree of accuracy with the experimental data. By evaluating temperature and bias dependent charge accumulation in the depletion region of the device, an AC model for the device intrinsic parameters has been developed. S‐parameters of the device have been evaluated by using the modeled AC intrinsic parameters that showed a good agreement with the measured data. Thus, the developed technique could be a useful tool to predict AC parameters of submicron AlGaN/GaN HEMTs meant for harsh environments.

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Dependence of GaN HEMT Millimeter-Wave Performance on Temperature

Cited by 66 publications

References 12 publications

Performance Comparison of GaN HEMTs on Diamond and SiC Substrates Based on Surface Potential Model

Performance Comparison of GaN HEMTs on Diamond and SiC Substrates Based on Surface Potential Model

Experimental insight into the temperature effects on DC and microwave characteristics for a GaAs pHEMT in multilayer 3‐D MMIC technology

An improved temperature dependent analytical model to predict AlGaN/GaN high electron mobility transistors AC characteristics

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