Dependence of ion-electron emission from clean metals on the incidence angle of the projectile

Ferrón, J.; Alonso, E.V.; Baragiola, R. A.; Oliva-Florio, A.

doi:10.1103/physrevb.24.4412

Cited by 50 publications

(14 citation statements)

References 15 publications

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“…This is valid due to the large secondary electron yield for ions striking a channel that results from the combination of the dielectric nature of the channel 41 and the glancing angle of incidence of the radiation striking a channel. 39,40 This is consistent with the results of several studies using keV ions as the primary radiation for which Q C Ϸ1. [43][44][45] Therefore, the apparent maximum value of Q W (E), which is obtained when Q C ϭ1 and EϾ1 V/mm, is approximately 0.66 for incident 20 keV H ϩ .…”

Section: A Applied Electric Field Effects On the Quantum Detection Esupporting

confidence: 91%

“…For incident ions striking a channel wall, the secondary electron yield is significantly increased due to the glancing angle of incidence 39,40 and the dielectric properties 41 of the channel walls. Here, we expect that this enhanced secondary electron yield results in a quantum detection efficiency close to unity for ions impacting a channel wall.…”

Section: Secondary Electron Yield Measurementmentioning

confidence: 99%

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Effect of local electric fields on microchannel plate detection of incident 20 keV protons

Funsten

Suszcynsky

Harper

et al. 1996

Review of Scientific Instruments

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Absolute detection efficiencies of a microchannel plate detector for 0.5-5 keV neutrals Rev. Sci. Instrum. 81, 063301 (2010); 10.1063/1.3442514Current response characteristics of microchannel plates xray detector using synchrotron radiation (0.6-2 keV and 5-20 keV) Rev. Sci. Instrum. 59, 252 (1988);Relative electron detection efficiency of microchannel plates from 0-3 keV Rev.We present data demonstrating the influence of an applied electric field E oriented normal to the input surface of a microchannel plate ͑MCP͒ detector on the critical operating parameters of the detector, including the quantum detection efficiency, the spatial resolution, and pulse height distribution. The MCP detector response is characterized using 20 keV protons as the primary radiation. An applied electric field EϽϪ4 V/mm, where a negative value of E corresponds to a nearby object that is biased positive relative to the input surface, results in a high spatial resolution and a quantum detection efficiency that is approximately equal to the open area ratio of the MCP. An electric field Ϫ1ϽEϽ5 V/mm results in low spatial resolution, in which up to 32% of the measured signal appears as a localized noise that extends several millimeters from the point of ion impact, and a maximum quantum detection efficiency of approximately 0.87. Furthermore, a separate peak in the pulse-height distribution arises from ions striking the web of the MCP detector and has a much lower pulse magnitude than that of ions striking channels. For EϾ5 V/mm, the spatial resolution increases, and the quantum detection efficiency slightly decreases from its maximum value with increasing E. The characteristics of each of these electric field configurations are analyzed in the context of the yield and transport of secondary electrons created at the web of the MCP detector, and the results can be scaled to other ions and energies according to the secondary electron yield of ions striking the web.

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Section: A Applied Electric Field Effects On the Quantum Detection Esupporting

confidence: 91%

Section: Secondary Electron Yield Measurementmentioning

confidence: 99%

Effect of local electric fields on microchannel plate detection of incident 20 keV protons

Funsten

Suszcynsky

Harper

et al. 1996

Review of Scientific Instruments

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“…4(b) that for lower energies there is a weaker variation of e with angle than 1= cos. This energy angle dependence was noticed previously and at-tributed to three possible factors: scattering and slowing down of the projectile in the region of greater electron escape probability, influence of recoiling target atoms, and anisotropy in the source of excited electrons [38]. Figure 4(a) simulates the first two possibilities with the model developed using the TRIM program.…”

Section: Resultssupporting

confidence: 56%

Beam energy scaling of ion-induced electron yield fromK+impact on stainless steel

Covo

Molvik

Friedman

et al. 2006

Phys. Rev. ST Accel. Beams

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Electron clouds limit the performance of many major accelerators and storage rings. Significant quantities of electrons result when halo ions are lost to beam tubes, generating gas which can be ionized and ion-induced electrons that can multiply and accumulate, causing degradation or loss of the ion beam. In order to understand the physical mechanisms of ion-induced electron production, experiments studied the impact of 50 to 400 keV K ions on stainless steel surfaces near grazing incidence, using the 500 kV ion source test stand (STS-500) at LLNL. The experimental electron yield scales with the electronic component (dE e =dx) of the stopping power and its angular dependence does not follow 1= cos. A theoretical model is developed, using TRIM code to evaluate dE e =dx at several depths in the target, to estimate the electron yield, which is compared with the experimental results. The experiment extends the range of energy from previous works and the model reproduces the angular dependence and magnitude of the electron yield.

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“…contain a ~3× reduction due to secondary electron re-absorption but with a net ~2× reduction observed due to a simultaneous increase in SEE resulting from increased mean electron incident angle. Ion-impact SEE, however (which consists of kinetic electron emission [34] and potential electron emission [35,36]) does not exhibit an incidence angle dependence for singly-charged incident ions with sub-keV energy, so these measurements may better isolate the fuzz re-absorption effect without the complication of the incidence angle effect.…”

Section: Discussionmentioning

confidence: 99%

Observation of reduction of secondary electron emission from helium ion impact due to plasma-generated nanostructured tungsten fuzz

Hollmann¹,

Doerner²,

Nishijima³

et al. 2017

J. Phys. D: Appl. Phys.

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Growth of nanostructured fuzz on a tungsten target in a helium plasma is found to cause a significant (~3×) reduction in ion impact secondary electron emission in a linear plasma device. The ion impact secondary electron emission is separated from the electron impact secondary electron emission by varying the target bias voltage and fitting to expected contributions from electron impact, both thermal and nonthermal; with the non-thermal electron contribution being modeled using MonteCarlo simulations. The observed (~3×) reduction is similar in magnitude to the (~2×) reduction observed in previous work for the effect of tungsten fuzz formation on secondary electron emission due to electron impact. It is hypothesized that the observed reduction results from re-absorption of secondary electrons in the tungsten fuzz.

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Dependence of ion-electron emission from clean metals on the incidence angle of the projectile

Cited by 50 publications

References 15 publications

Effect of local electric fields on microchannel plate detection of incident 20 keV protons

Effect of local electric fields on microchannel plate detection of incident 20 keV protons

Beam energy scaling of ion-induced electron yield fromK+impact on stainless steel

Observation of reduction of secondary electron emission from helium ion impact due to plasma-generated nanostructured tungsten fuzz

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