Dependence of Mechanical Stress in Silicon Nitride Films on Conditions of Plasma-Enhanced Chemical Vapor Deposition

Novak, A. V.; Novak, V. R.; Dedkova, A. A.; Gusev, E. E.

doi:10.24151/1561-5405-2017-22-2-138-146

Cited by 2 publications

(2 citation statements)

References 6 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Existing research data show that positive fixed charge may form in dielectric/АlGaN/GaN structures synthesized using plasmochemical processes with almost any known precursors [3]. In turn the formation of the positive charge shifts the C-V curves of the structures towards negative voltages [3][4][5][6]. Experimental data have shown that the major origin of the positive charge in SiN x film structures is the large piezoelectric charge generated by changes in the elastic stresses in the AlGaN layer as a result of dielectric film deposition.…”

Section: Introductionmentioning

confidence: 99%

“…Electric states generated at the dielectric/semiconductor interface during the formation of protective coatings are of a great interest. Parameters of film/heterostructure surface interface were analyzed [1][2][3][4][5][6][7][8][9][10], including the possibility of the formation of donor-like trapping centers due to the impact of plasma ions during PECVD processes. It was reported [8] that there are but a few trapping states in the dielectric film bulk: these states locate very close to the dielectric/semiconductor interface.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Effect of PECVD SiNx deposition process parameters on electrical properties of SiNx/AlGaN/GaN structures

Enisherlova¹,

Seidman²,

Temper³

et al. 2021

MoEM

View full text Add to dashboard Cite

The effect of parameters of plasma enhanced chemical vapor deposition (PECVD) processes for SiNx film fabrication on the electrical parameters of dielectric/АlGaN/GaN structures has been studied. The effect of growing film composition, additional heterostructure surface treatment with nitrogen plasma before dielectric deposition and HF biasing during treatment on the parameters of the С–V and I–V curves of SiNx/АlGaN/GaN structures has been analyzed. We show that films with nitrogen to silicon concentration ratios of 60 and 40% and a high oxygen content exhibit a decrease in the positive fixed charge in the structures although the I–V curves of the structures exhibit current oscillations. Information has been reported on the effect of PECVD process mode on current oscillation parameters, e.g. period and amplitude, and length of I–V curve section in which oscillations occur. Possible explanation of these oscillations has been suggested. Additional nitrogen plasma treatment of heterostructure surface before monosilane supply to the chamber changes the magnitude and sign of fixed charge and reduces the free carrier concentration in the 2D gas channel of SiNx/АlGaN/GaN heterostructures. Experimental evidence has been provided for the effect of PECVD process parameters and surface preparation on the electrical parameters of the heterostructures grown.

show abstract

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Effect of PECVD SiNx deposition process parameters on electrical properties of SiNx/AlGaN/GaN structures

Enisherlova¹,

Seidman²,

Temper³

et al. 2021

MoEM

View full text Add to dashboard Cite

show abstract

Influence of PECVD features of SiNx deposition processes on electrical parameters of SiNx/AlGaN/GaN structures

Еnisherlova,

Seidman,

Temper

et al. 2021

Izv. vysš. učebn. zaved., Mater. èlektron. teh.

View full text Add to dashboard Cite

In this work, we studied the influence of the processes of plasma-chemical deposition of SiNx films on the electrical parameters of the dielectric/AlGaN/GaN structure. The effect of the composition of the formed films, the effect of additional surface treatment of heterostructures in nitrogen plasma prior to dielectric deposition, as well as the effect of the RF bias supply during this treatment on the C-V and I-V characteristics of the SiNx/AlGaN/GaN structures were analyzed. It was found that for films with a ratio of nitrogen and silicon concentrations of 60 % and 40 %, as well as with an increased oxygen content, a decrease in the value of a fixed positive charge in these structures is characteristic, but the appearance of current pulsations is observed on the I-V characteristics of the structures. It was revealed how the modes of the plasma chemistry process affect such parameters of oscillations as the period, amplitude, length of the section of the I-V characteristic, where oscillations are observed. A possible explanation of the reasons for the appearance of characteristic pulsations is proposed. It has been established that the additional action of nitrogen plasma on the surface of the heterostructure before the monosilane is introduced into the chamber leads to a change in the magnitude and sign of the fixed charge and to a decrease in the concentration of free carriers in the channel of a two-dimensional gas of SiNx/AlGaN/GaN heterostructures. It is shown experimentally how the technological features of the deposition and surface preparation processes can affect the electrical parameters of the formed heterostructures.

show abstract

Dependence of Mechanical Stress in Silicon Nitride Films on Conditions of Plasma-Enhanced Chemical Vapor Deposition

Cited by 2 publications

References 6 publications

Effect of PECVD SiNx deposition process parameters on electrical properties of SiNx/AlGaN/GaN structures

Effect of PECVD SiNx deposition process parameters on electrical properties of SiNx/AlGaN/GaN structures

Influence of PECVD features of SiNx deposition processes on electrical parameters of SiNx/AlGaN/GaN structures

Contact Info

Product

Resources

About