Dependence of Negative Resistivity on Current Density and Junction Temperature for DDR IMPATT

Deyasi, Arpan; Mukherjee, Kasturi; Bhattacharyya, Suvanjan

doi:10.1109/cicn.2014.216

2014 International Conference on Computational Intelligence and Communication Networks 2014

DOI: 10.1109/cicn.2014.216

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Dependence of Negative Resistivity on Current Density and Junction Temperature for DDR IMPATT

Arpan Deyasi¹,

Kasturi Mukherjee²,

Suvanjan Bhattacharyya³

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Cited by 3 publications

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Generation of Tunable Low-noise Millimeter-wave Signal using Optical Frequency Comb through Electrical Mixing at 94 GHz

Dhar

Deyasi²,

Sarkar

2021

2021 Devices for Integrated Circuit (DevIC)

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Dependence of Negative Resistivity on Current Density and Junction Temperature for DDR IMPATT

Cited by 3 publications

References 10 publications

Generation of Tunable Low-noise Millimeter-wave Signal using Optical Frequency Comb through Electrical Mixing at 94 GHz

Generation of Tunable Low-noise Millimeter-wave Signal using Optical Frequency Comb through Electrical Mixing at 94 GHz

Dependence of small-signal properties of Si/Si0.9Ge0.1 DDR IMPATT on input current density at millimeterwave frequency

V-Band InP DDR IMPATTs for High Current Operation

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