Dependence of optimized annealing temperature for tetragonal phase formation on the Si concentration of atomic-layer-deposited Hf-silicate film

Abstract

This study examined the relation between the permittivity and microstructures of atomic layer deposited Hf 1Àx Si x O 2 (HfSiO) thin films with different Si concentrations as a function of post-deposition annealing (PDA) temperature. The PDA at high temperature results in the separation of crystallized HfO 2 phase from the much higher Si-containing amorphous-like matrix. Tetragonal phase HfO 2 formation with higher permittivity than the monoclinic HfO 2 phase is induced with an appropriate Si concentration in the film ($10-20%). In the crystallized HfSiO film, the Si concentration in the phase-separated HfO 2 (mainly consisting of HfO 2) could be controlled by PDA temperature, which determines the degree of phase separation. The increased PDA temperature reduces the Si concentration in the phase-separated HfO 2 , which induced monoclinic phase formation. Therefore, the PDA temperature for maximized permittivity of the crystallized HfSiO films (maximized tetragonal phase portion in the film) depends on the Si concentration of the HfSiO film in the as-deposited state. V

A HfO2‐Based Complementary Switching Crossbar Adder

“…The HfO 2 -layer is sputtered reactively by using a Hf target as metal source and the shows that the Hf-4f peak is split into a doublet due to a spin-orbital interaction. A higher energetic peak ( [ 31,32 ] Additionally, the spectral analysis gives a ratio of Hf:O about 1:1.9, i.e., the oxide is reduced slightly.…”

Group IV Transition Metal (M = Zr, Hf) Precursors for High-κ Metal Oxide Thin Films

“…With increasing PDA temperature, the 5/2 and 7/2 spin−orbital splitting in the Hf 4f XPS profiles became less clearly separated than that of the as-deposited HfO 2 film, due to the formation of Hf silicate (Figure S11). 16,42,43 The C 1s core level peak (Figure 8(c)) was not observed after PDA at either temperature, which indicates negligible carbon contamination (at least lower than the XPS detection limit of ∼0.1%). Figure 9 shows the C−V and J−V curves of the Au/(8-and 12 nm-thick ALD HfO 2 )/ (p-Si) MOS structures.…”

Interfacial Dead-Layer Effects in Hf-Silicate Films with Pt or RuO2 Gates

“…ALD HfO 2 and thermally oxidized SiO 2 films were also prepared as references to compare their properties with those of Hf-silicate films. Details about the ALD process can be found elsewhere . The film thickness varied from ∼2 to ∼8 nm, which was measured by spectroscopic ellipsometry (J.…”