Dependence of Resonant Voltage on Quantum-Well Width in CaF₂/Fe₃Si/CaF₂ Resonant Tunneling Diodes

Abstract

200-nm-diameter CaF2 (5 nm)/Fe3Si/CaF2 (5 nm) ferromagnetic resonant tunneling diodes (FM-RTDs) were fabricated on a Si(111) substrate through SiO2 hole arrays by selective-area molecular beam epitaxy. Fe3Si quantum-well width (d) values of 4, 5, and 8 nm were used. The current density versus voltage (J–V) characteristics were measured at room temperature and the peak-voltage separations in d 2 J/d V 2–V plots were found to be inversely proportional to d 2. This result implies that resonant tunneling occurs in the FM-RTDs.

Room-Temperature Tunneling Magnetoresistance in Magnetic Tunnel Junctions with a D03-Fe3Si Electrode

“…Actually, Fe 3 Si has been widely utilized for ferromagnetic electrodes in some spintronic devices. [5][6][7][8][9][10][11][12][13][14][15][16][17][18] In particular, we have demonstrated epitaxial growth of highly D0 3 -ordered Fe 3 Si films on Si(111) or Ge(111) by low temperature molecular beam epitaxy (MBE). [8][9][10][11][12] Using high-quality Fe 3 Si/n þ -Si 13) or Fe 3 Si/n þ -Ge 14) Schottkytunnel-barrier contacts, we recently observed spin accumulation created electrically in Si or Ge, respectively, but the detection of the spin signals has been limited at low temperatures.…”