2017
DOI: 10.1109/led.2017.2765458
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Dependence of Seebeck Coefficient on the Density of States in Organic Semiconductors

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Cited by 11 publications
(4 citation statements)
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“…This approach is more widely applicable than the simpler Mott formula 20 and has the advantage of connecting α to the average entropy per carrier. Since these expressions are valid (neglecting correlation effects) across all doping levels regardless of the conduction mechanism or the semiconductor’s crystalline, semi-crystalline, or amorphous nature, they support numerous mechanisms of conduction in disordered semiconductors 2123 , including hopping models based on the Miller–Abrahams 24 and Marcus 25 jump rates, that add to our physical explanation of charge transport in conjugated polymers and provide structural design criteria for improving their performance.…”
Section: Introductionmentioning
confidence: 90%
“…This approach is more widely applicable than the simpler Mott formula 20 and has the advantage of connecting α to the average entropy per carrier. Since these expressions are valid (neglecting correlation effects) across all doping levels regardless of the conduction mechanism or the semiconductor’s crystalline, semi-crystalline, or amorphous nature, they support numerous mechanisms of conduction in disordered semiconductors 2123 , including hopping models based on the Miller–Abrahams 24 and Marcus 25 jump rates, that add to our physical explanation of charge transport in conjugated polymers and provide structural design criteria for improving their performance.…”
Section: Introductionmentioning
confidence: 90%
“…To realize a high PF of the OTMs, feasible strategies involving a valid approach to sharpen the local increase of density of states (DOS) nearby the Fermi level ( E F ) of the materials deliver a predictable means to modify their S . Alternatively, an ion accumulation mechanism with the incorporation of ionic liquid at the surface enables another channel to increase the S of the samples . On the other hand, molecular design with the concept of low effective masses of charge carriers (that is, an intrinsic high mobility) renders an effective way to screen out satisfactory OTMs with high σ. Besides, side chain engineering by introducing large polarity oxyalkyl chains provides additional technique to facilitate the coprocessing of dopant/polymer pairs, which is beneficial to improving the molecular arrangement for σ-enhancement. , Nevertheless, chemical doping is the essential requirement for OTMs due to the intrinsic low σ, and therefore endeavors to clarify the differences of doping behaviors of the OTMs on account of the variation of molecular parameters are more significant. Here, the electrical properties of the doped organic semiconductors are mainly dominated by the thermal activation energy of conductivity ( E act ,σ ) which can be inferred from the Coulomb binding energy ( E coul,ICTC ) or static energy disorder (σ ICTC ) of the integer charge transfer complexes (ICTCs) at low or high doping concentrations, respectively .…”
Section: Introductionmentioning
confidence: 99%
“…This value changed to positive value of 1.14 after doping. In ideal, scattering parameter have values from r = −1/2 for the acoustic phonon scattering to r = 3/2 for ionized impurities scattering 24,25 . There is relatively large deviation for the scattering parameter values of pristine and Joule-annealed CNT yarn in this system.…”
Section: Discussionmentioning
confidence: 99%