Dependence of Short-Channel Effects on Semiconductor Bandgap in Tunnel Field-Effect Transistors

Chien, Nguyen Dang; Shih, Chun‐Hsing; Teng, Hung-Jin; Pham, Cong‐Kha

doi:10.1088/1742-6596/1034/1/012003

Cited by 4 publications

(1 citation statement)

References 17 publications

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“…A steep SS with a sufficient on-current and low off-current is a key requirement for TFET devices. Engineering heterojunction devices with lowbandgap materials is an effective approach for increasing oncurrent levels; however, such devices exhibit considerably high off-state leakage and endure severe short-channel effects [7][8][9][10][11][12][13]. Accordingly, several hetero-gate-stack structures have been proposed to optimize device on-off switching characteristics.…”

Section: Introductionmentioning

confidence: 99%

Device operation and physical mechanism of asymmetric junctionless tunnel field-effect transistors designed to suppress coupled short-channel/short-drain effects and promote on-current switching for ultralow-voltage CMOS applications

Chen¹,

Teng²,

Lien³

et al. 2022

Semicond. Sci. Technol.

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Scaled tunnel field-effect transistors (TFETs) endure severe short-channel and short-drain effects caused by direct source-to-drain and body-to-drain tunneling. This study numerically examined a Si-based asymmetric junctionless TFET (AJ-TFET) architecture for suppressing coupled short-channel and short-drain effects in and improving the on-current switching of TFET devices for ultralow-voltage CMOS applications. The junctional drain/body facilitates the extending of the off-state tunnel barrier into the drain, enhancing robustness against short-channel and short-drain effects. The junctionless source/body can minimize lateral coupling and thus lead to efficient switching in a TFET, thus generating steep on–off switching swings. The results revealed that in contrast to conventional PIN-TFETs, the AJ-TFET evaluated in this study exhibited considerably lower swing levels and higher current levels. The voltage-scaled AJ-TFET retained excellent subthreshold behaviors and short-channel robustness, offering adequate on-current levels along with minimized leakage levels. Incorporating high-k gate dielectrics into the devices enabled extra on-current boosting and swing minimization, further extending the deep-swing, high-current operation region. Because of their excellent on–off switching and on-current enhancement, the extremely scaled AJ-TFET could operate adequately at low gate and drain voltages (0.3–0.5 V); therefore, they are promising candidates for use in ultralow-voltage energy-efficient applications.

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