DEPENDENCE OF THE 1/f NOISE PARAMETER αl ON VOLUME AND TEMPERATURE

A theory for Hooge's equation based on temperature fluctuations

“…Also Eqn. 29 predicts that Hooge's parameter will have a weak temperature dependence such as has been reported 17,21 .…”

“…A range of values from 10 -6 to 10 -1 have been reported for Hooge's parameter for semiconductor films or layers and for the conducting channels of JFET's and HEMT's at low electric fields [6][7][8][9][10][11][12][13][14][15][16][17][18][19][20][21][22][23] . Typical values are 10 -4 which is consistent with the doping levels and number of atoms in these materials, Eqn.…”