Dependence of the band‐gap pressure coefficients of self‐assembled InAs/GaAs quantum dots on the quantum dot size

Kristukat, C.; Goñi, A. R.; Pötschke, K.; Bimberg, D.; Thomsen, C.

doi:10.1002/pssb.200672511

Cited by 10 publications

(10 citation statements)

References 14 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…28 and atomistic valence-force field method in Ref. 27 were implemented. In all of the former works, the QDs have been modeled as quantum pyramids.…”

Section: Introductionmentioning

confidence: 99%

Optical transition in self-assembled InAs/GaAs quantum lens under high hydrostatic pressure

Aguilar

Trallero‐Giner

Duque

et al. 2009

Journal of Applied Physics

View full text Add to dashboard Cite

We present a simulation to characterize the dependence on hydrostatic pressure for the photoluminescence spectra in self-assembled quantum dots with lens shape geometry. We have tested the physical effects of the band offset and electron-hole effective masses on the optical emission in dot lens. The model could be implemented to get qualitative information of the parameters involved in the quantum dot or the measured optical properties as function of pressure.

show abstract

“…28 and atomistic valence-force field method in Ref. 27 were implemented. In all of the former works, the QDs have been modeled as quantum pyramids.…”

Section: Introductionmentioning

confidence: 99%

Optical transition in self-assembled InAs/GaAs quantum lens under high hydrostatic pressure

Aguilar

Trallero‐Giner

Duque

et al. 2009

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

“…We may assume that the InAs layer is under hydrostatic pressure, which results in compressive strains in all three directions. [26][27][28] We take the c-axis lattice constant of wurtzite InAs ͑Ref. 2͒ ͑InP͒ ͑Ref.…”

mentioning

confidence: 99%

Type-II behavior in wurtzite InP/InAs/InP core-multishell nanowires

Pal

Goto

Ikezawa

et al. 2008

Applied Physics Letters

View full text Add to dashboard Cite

We study optical transitions from a periodic array of InP/InAs/InP core-multishell nanowires ͑CMNs͒ having a wurtzite crystal structure by using photoluminescence ͑PL͒ and PL excitation ͑PLE͒ spectroscopy. Observing a large Stokes shift between PL and PLE spectra, a blueshift of the PL peak with a cube-root dependence on the excitation power and a slow and nonexponential decay of PL with an effective decay time of 16 ns suggest a type-II band alignment. Band-offset calculation based on the "model-solid theory" of Van Nanometer-scale semiconductor heterostructures such as quantum dots, quantum wires, and quantum wells ͑QWs͒ have been interesting research targets due to their unique size-dependent electronic and optical properties associated with the lower dimensionality and quantum confinement effects. There have been revived interests in semiconductor nanowires ͑NWs͒ due to recent success in growth and fabrication of a regular array of core-shell and core-multishell NWs ͑CMNs͒.1,2 Semiconductor NWs can be used as building blocks of sophisticated nanoscale electronic and photonic devices.3 Much effort has been devoted so far to the growth and fabrication of CMNs and the periodic arrays of such structures.1,2 However, very little is known about the electronic structure and optical properties of this new class of technologically important structures.In this letter we report optical studies on the periodic array of InP/InAs/InP CMNs. Both InP and InAs have a wurtzite crystal structure in the NW form, 4-6 although bulk InP and InAs crystallize to a zinc-blende structure. Moreover, in our CMN sample a thin InAs layer is surrounded by thick InP layers from all sides and the InP layers act like a mold. As a first approximation, we may consider that the InAs lattice experiences a three-dimensional compressive strain and attains the size of the InP lattice in all directions unlike InAs/InP QWs, where the InAs lattice is compressed in the crystal growth plane and is elongated in the growth direction. There have been a few studies on ultrathin InAs/ InP QWs having zinc-blende structure. 7 These experimental results and theoretical calculations using an envelopefunction scheme with effective-mass approximation and empirical tight-binding model 8 seem to show type-I direct transitions in zinc-blende InAs/InP QWs, although some calculations also predict type-II behavior.9 In contrast, the electronic structure and optical properties of wurtzite InP and InAs are almost unknown. 5,10 Due to the differences in crystal structure and strain, the insights gathered from the studies on zinc-blende InAs/InP QWs cannot be applied directly to wurtzite InP/InAs/InP CMNs.We study the InP/InAs/InP CMNs using time-resolved ͑TR͒ and spectrally resolved ͑SR͒ photoluminescence ͑PL͒ and PL excitation ͑PLE͒ measurements. A large Stokes shift between PL and PLE spectra was observed, which along with the absence of strong PLE peak suggests type-II radiative recombination. With increasing excitation power ͑P͒ the PL peaks show a blueshift with a cu...

show abstract

“…Pressure dependent PL is thus a convenient technique to probe the nature of the optical transitions in QDs [56,57]. In this paper, the same sample as in Sec.…”

Section: B Effect Of the Hydrostatic Pressurementioning

confidence: 99%

Electronic wave functions and optical transitions in (In,Ga)As/GaP quantum dots

et al. 2016

Self Cite

View full text Add to dashboard Cite

Document VersionPublisher's PDF, also known as Version of Record (includes final page, issue and volume numbers) Please check the document version of this publication:• A submitted manuscript is the author's version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publicationCitation for published version (APA): Robert, C., Pereira Da Silva, K., Nestoklon, M. O., Alonso, M. I., Turban, P., Jancu, J-M., ... Cornet, C. (2016). Electronic wave functions and optical transitions in (In,Ga)As/GaP quantum dots. Physical Review B, 94(7), 1-11. [075445]. DOI: 10.1103/PhysRevB.94.075445 General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal ? Take down policyIf you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim. We study the complex electronic band structure of low In content InGaAs/GaP quantum dots. A supercell extended-basis tight-binding model is used to simulate the electronic and the optical properties of a pure GaAs/GaP quantum dot modeled at the atomic level. Transitions between hole states confined into the dots and several X Z -like electronic states confined by the strain field in the GaP barrier are found to play the main role on the optical properties. Especially, the calculated radiative lifetime for such indirect transitions is in good agreement with the photoluminescence decay time measured in time-resolved photoluminescence in the µs range. Photoluminescence experiments under hydrostatic pressure are also presented. The redshift of the photoluminescence spectrum with pressure is also in good agreement with the nature of the electronic confined states simulated with the tight-binding model.

show abstract

Dependence of the band‐gap pressure coefficients of self‐assembled InAs/GaAs quantum dots on the quantum dot size

Cited by 10 publications

References 14 publications

Optical transition in self-assembled InAs/GaAs quantum lens under high hydrostatic pressure

Optical transition in self-assembled InAs/GaAs quantum lens under high hydrostatic pressure

Type-II behavior in wurtzite InP/InAs/InP core-multishell nanowires

Electronic wave functions and optical transitions in (In,Ga)As/GaP quantum dots

Contact Info

Product

Resources

About