2011
DOI: 10.1103/physrevlett.107.217402
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Dependence of the Redshifted and Blueshifted Photoluminescence Spectra of SingleInxGa1xAs/GaAsQuantum Dots on the Applied Uniaxial Stress

Abstract: We apply external uniaxial stress to tailor the optical properties of In(x)Ga(1-x)As/GaAs quantum dots. Unexpectedly, the emission energy of single quantum dots controllably shifts to both higher and lower energies under tensile strain. Theoretical calculations using a million atom empirical pseudopotential many-body method indicate that the shifting direction and magnitude depend on the lateral extension and more interestingly on the gallium content of the quantum dots. Our experimental results are in good ag… Show more

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Cited by 47 publications
(54 citation statements)
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“…However, because the neutral, charged, and bi-exciton lines all experience nearly identical behavior under strain [151,159], the exact nature of the exciton emission does not affect our results.…”
Section: Qed Systemmentioning
confidence: 45%
See 2 more Smart Citations
“…However, because the neutral, charged, and bi-exciton lines all experience nearly identical behavior under strain [151,159], the exact nature of the exciton emission does not affect our results.…”
Section: Qed Systemmentioning
confidence: 45%
“…Methods to improve strain transfer into the sample such as using a stiffer bracket and a smaller piece of substrate may also improve tuning range. Finally, it is also possible to use a different type of quantum dots that are more sensitive to strain [159,162]. The current device implementation can be adapted to apply strain locally to individual cavities using micro-fabricated piezoelectric micro-electro-mechanical structures.…”
Section: Discussionmentioning
confidence: 99%
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“…Great efforts have been made trying to eliminate the FSS of excitons in QDs, and significant progress has been made in understanding [13][14][15][16] and manipulating the FSS in selfassembled QDs in recent years. Various techniques has been developed to eliminate the FSS in QDs [4,[17][18][19][20][21][22][23]. Especially, it was recently found by applying combined uniaxial stresses or stress together with electric field, it is possible to reduce to the FSS to nearly zero for general self-assembled InAs/GaAs QDs [5,23,24].…”
mentioning
confidence: 99%
“…8 Therefore, the photon entanglement is destroyed. 3,9 Different tuning techniques to erase the FSS, such as thermal annealing, 10 applying electric fields, [11][12][13] magnetic fields, 14 and strain fields [15][16][17][18][19][20][21][22] have been explored. Recently, a new method of using a microstructured semiconductor-piezoelectric device to build scalable entangled photon sources with self-assembled QDs was proposed, 23,24 and was successfully demonstrated by combined uniaxial stresses along two orthogonal directions, i.e., along [110] and [1-10] crystal axis of GaAs.…”
mentioning
confidence: 99%