Dependence of the sheet resistance of indium-tin-oxide thin films on grain size and grain orientation determined from X-ray diffraction techniques

Kulkarni, A. K.; Schulz, Kirk H.; Lim, Tae-Young; Khan, Md. Irfan

doi:10.1016/s0040-6090(98)01430-8

Cited by 242 publications

(105 citation statements)

References 18 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…For example, simulations by Vora et al showed a 19.65 % increase in short circuit current (J SC ) for nanocylinder patterned solar cell (NCPSC) in which the ITO layer thickness was kept at 10 nm to minimize the parasitic Ohmic losses and simultaneously act as a buffer layer while helping to tune the resonance for maximum absorption [14]. TCOs such as the most established indium tin oxide (ITO), aluminum-doped zinc oxide (AZO) and zinc oxide (ZnO) are standard integral materials in current thin-film solar PV devices [15][16][17][18]. Bulk material properties for common TCOs including ITO have been well researched and documented for different processing conditions and substrates [15,16,[19][20][21][22][23]; however, this is not the case for ultra-thin TCOs.…”

Section: Introductionmentioning

confidence: 99%

Limitations of ultra-thin transparent conducting oxides for integration into plasmonic-enhanced thin-film solar photovoltaic devices

Gwamuri

Vora

Khanal

et al. 2015

Mater Renew Sustain Energy

View full text Add to dashboard Cite

This study investigates ultra-thin transparent conducting oxides (TCO) of indium tin oxide (ITO), aluminum-doped zinc oxide (AZO) and zinc oxide (ZnO) to determine their viability as candidate materials for use in plasmonic-enhanced thin-film amorphous silicon solar photovoltaic (PV) devices. First a sensitivity analysis of the optical absorption for the intrinsic layer of a nano-disk patterned thin-film amorphous silicon-based solar cell as a function of TCO thickness (10-50 nm) was performed by simulation. These simulation results were then used to guide the design of the experimental work which investigated both optical and electrical properties of ultra-thin (10 nm on average) films simultaneously deposited on both glass and silicon substrates using conventional rf sputtering. The effects of deposition and post-processing parameters on material properties of ITO, AZO and ZnO ultrathin TCOs were probed and the suitability of TCOs for integration into plasmonic-enhanced thin-film solar PV devices was assessed. The results show that ultra-thin TCOs present a number of challenges for use as thin top contacts on plasmonic-enhanced PV devices: (1) optical and electrical parameters differ greatly from those of thicker (bulk) films deposited under the same conditions, (2) the films are delicate due to their thickness, requiring very long annealing times to prevent cracking, and (3) reactive gases require careful monitoring to maintain stoichiometry. The results presented here found a trade-off between conductivity and transparency of the deposited films. Although the sub 50 nm TCO films investigated exhibited desirable optical properties (transmittance greater than 80 %), their resistivity was too high to be considered as materials for the top contact of conventional PV devices. Future work is necessary to improve thin TCO properties, or alternative materials, and geometries are needed in plasmonic-based amorphous silicon solar cells. The stability of ultra-thin TCO films also needs to be experimentally investigated under normal device operating conditions.

show abstract

Section: Introductionmentioning

confidence: 99%

Limitations of ultra-thin transparent conducting oxides for integration into plasmonic-enhanced thin-film solar photovoltaic devices

Gwamuri

Vora

Khanal

et al. 2015

Mater Renew Sustain Energy

View full text Add to dashboard Cite

show abstract

“…With the growth of the flexible displays market comes a requirement for high quality ITO to be deposited onto polymeric substrates under ambient conditions. It is well established that films exhibiting a more crystalline structure have lower resistivity than those with an amorphous structure [8,9]. Crystalline growth can be promoted by heating the substrates [8,10,11] to temperatures in excess of approximately 180 °C.…”

Section: Introductionmentioning

confidence: 99%

“…It is well established that films exhibiting a more crystalline structure have lower resistivity than those with an amorphous structure [8,9]. Crystalline growth can be promoted by heating the substrates [8,10,11] to temperatures in excess of approximately 180 °C. For growth onto flexible substrates however, this is not feasible due to the temperature sensitive nature of the organic material.…”

Section: Introductionmentioning

confidence: 99%

Low temperature remote plasma sputtering of indium tin oxide for flexible display applications

et al. 2009

View full text Add to dashboard Cite

Abstract:Tin doped indium oxide (ITO) has been directly deposited onto a variety of flexible materials by a reactive sputtering technique that utilises a remotely generated, high density plasma. This technique, known as high target utilisation sputtering (HiTUS), allows for the high rate deposition of good quality ITO films onto polymeric materials with no substrate heating or post deposition annealing. Coatings with a resistivity of 3.8 ×10−4 Ωcm and an average visible transmission of greater than 90% have been deposited onto PEN and PET substrate materials at a deposition rate of 70 nm/min. The electrical and optical properties are retained when the coatings are flexed through a 1.0 cm bend radius, making them of interest for flexible display applications.

show abstract

“…Changes in the preferred orientation from (400) to (222) could occur due to increasing oxygen partial pressure or decreasing film thickness. 17,18) In this study, all ITO films were deposited…”

Section: Crystallinity Of Ito Films At Various Deposition Conditionsmentioning

confidence: 99%

Indium Tin Oxide Films with Low Resistivity at Room Temperature Using DC Magnetron Sputtering with Grid Electrode

et al. 2014

View full text Add to dashboard Cite

Indium tin oxide films were deposited at room temperature using a direct current magnetron sputtering system with a grid electrode. The glow discharge was confined between the target and the grid by inserting a grid electrode between the target and substrate of a conventional sputtering system. Next, various characterizations of indium tin oxide films were conducted including crystallinity, electrical properties, surface concentration, optical transmittance, and surface roughness. A negative grid voltage changed or decreased the crystallinity of the films. Moreover, suppressing the diffusion of the glow discharge by applying a negative grid voltage was highly effective in decreasing the resistivity of the indium tin oxide film by increasing the carrier concentration and mobility at room temperature.

show abstract

Dependence of the sheet resistance of indium-tin-oxide thin films on grain size and grain orientation determined from X-ray diffraction techniques

Cited by 242 publications

References 18 publications

Limitations of ultra-thin transparent conducting oxides for integration into plasmonic-enhanced thin-film solar photovoltaic devices

Limitations of ultra-thin transparent conducting oxides for integration into plasmonic-enhanced thin-film solar photovoltaic devices

Low temperature remote plasma sputtering of indium tin oxide for flexible display applications

Indium Tin Oxide Films with Low Resistivity at Room Temperature Using DC Magnetron Sputtering with Grid Electrode

Contact Info

Product

Resources

About