2002
DOI: 10.1088/0256-307x/19/3/334
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Dependence of Tunnel Resistance on the Injection Current of Magnetic Tunnel Junctions

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“…A negative differential resistivity and even a negative resistivity could be observed when high bias voltages were applied to some samples. The main reason for this unusual phenomenon is the low resistivity and low barrier height due to a large amount of pinholes, which causes negative resistance [24]in crossed-wire devices. To avoid In the last step of device fabrication, Cobalt is deposited on top of the magnetic tunnel barrier by thermal evaporation.…”
Section: Appendix a Supplementary Data: Graphene Spin Valve Device Fa...mentioning
confidence: 99%
“…A negative differential resistivity and even a negative resistivity could be observed when high bias voltages were applied to some samples. The main reason for this unusual phenomenon is the low resistivity and low barrier height due to a large amount of pinholes, which causes negative resistance [24]in crossed-wire devices. To avoid In the last step of device fabrication, Cobalt is deposited on top of the magnetic tunnel barrier by thermal evaporation.…”
Section: Appendix a Supplementary Data: Graphene Spin Valve Device Fa...mentioning
confidence: 99%