Dependence on Base Width and Doping Concentration of Current Degradation in Gate-controlled Lateral PNP Bipolar Transistors Exposed to Reactor Neutrons and Gamma Rays

Wang, Chen-Hui; Chen, Wei; Jin, Xiaoming; Liu, Yan; Yang, Shanchao

doi:10.1016/j.egypro.2017.08.119

Cited by 4 publications

(1 citation statement)

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“…Three kinds of gate-controlled lateral PNP transistors (GCL-PNPs) with different base widths and doping concentrations are specially designed to explore base current degradation induced by reactor neutrons and gamma rays. Dependence on base width and doping concentration of the degradation is analyzed in this work and the results are beneficial to radiation-hardening design of the lateral PNP BJT [20].…”

Section: Introductionmentioning

confidence: 99%

Design and Simulation of a Novel Hetero-junction Bipolar Transistor with Gate-Controlled Current Gain

Mehrabani

Fattah

Rahimi

2023

IJE

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A new structure for SiGe Hetero-junction Bipolar transistor (HBT) is designed and simulated using Silvaco simulator. The considered extra terminal gives the ability to control the transistor's current gain. By applying voltage to the gate terminal, the base effective width would be controlled. Decrement of the Base width yields to the carrier recombination rate reduction, let the emitted electrons to have higher chance to reach the collector. Considering extra terminal have two approaches. One is to improve the current gain of the transistor by applying a constant voltage to the gate and the other is to modify the characteristics of the transistor in such a way that the current gain became optimized. The current gain of the transistor without any gate voltage is about 50V, which increases to 750 for high and 50,000 for low collector currents with the gate voltage variation consideration. In addition, our final proposed gatecontrolled HBT with a large gate over the base and collector has the breakdown voltage of 8V and the cut-off frequency of about 11 GHz. The maximum FoM of 1200 is achieved using the proposed structure.

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Section: Introductionmentioning

confidence: 99%