Dependency of Thermo-Physical Properties on Surface Bonding of Bn Nano-Crystal

Murugan²

2015

AMR

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In this paper we have studied the size and number of atom-pairs dependence normalized per atom pair binding (cohesive) energy and melting temperature of the Aluminium nitride () nanoparticle using simple model approach. It is observed that the per-atom-pair binding (cohesive) energy and melting temperature are a quadratic function of the inverse of the particle size fornano-particle. The per atom-pair binding (cohesive) energy and melting temperature comes near that of their bulk value with increasing the particle size and same as the bulk material when the particle size is above than 100 nm.KeywordsSemiconductors; Size effect; Binding energy; Melting temperature; nanoparticle; nanocluster.

Section: Introductionmentioning

confidence: 99%

Surface Bonding Effect in Thermo Physical Properties of Aluminium Nitride Nano-Particle<sup></sup>

Murugan²

2015

AMR

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“…Therefore, many properties of these materials can be systematically described and understood in term of quantum confinement effects. Diwan et al [9] have studied by simple model approach, the variation of normalized per-atom pair cohesive (binding) energy and melting temperature with size and number of atom-pairs in the BN nanoparticle. The accurate band gaps for semiconductors have been calculated by Xiao et al [10] using density functional theory.…”

Section: Introductionmentioning

confidence: 99%

Influence of Size on Effective Band Gap of Silicon Nano-Wire

Dubey²

2014

AMR

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In this article, the effect of wire-size on the effective band gap of Silicon (Si) is analyzed. The band gap is one of the most significant electronic parameters of semiconductor material. The band gap of semiconductor depends on temperature, pressure, composition, number of atoms as well as on the size of the particle. When semiconductors are synthesized at nanoscale level, their small particle size gives rise to quantum confinement and the energy bands are split into discrete levels. It is observed that effective band gap of semi-conductor depends on the size of the wire (number of atoms and dimensions) and it increases by decreasing the size of Si nanowire. The size quantization effect is noticed as a shift of the effective band gap toward lower values with increasing temperature of Si nanowire which also shows increase in atomic vibrations. Keywords: Size effect; Energy band gap; Semiconductor, effective mass; nanowire.

Role of surface bonding in thermo physical properties of Indium nitride nano-semiconductor

International Conference on Advanced Nanomaterials &Amp; Emerging Engineering Technologies

Murugan²

2013

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In this paper we have analyzed the effect of size cohesive (binding) energies as a function of their particle size and number of atom-pairs in normalized per atom pair binding that fmds out their detailed atomistic bonding.(cohesive) energy and melting temperature of the Indium nitride Ramos et a. [6] have calculated the lattice constant, bulk ( InN ) nano-particle using simple model approach. It is observed modulus, cohesive energy and electronic band structures of that the per-atom-pair binding (cohesive) energy and melting silicon and the zinc-blende-type III-N semiconductor temperature are a quadratic function of the inverse of the particle size for InN nano-particle. The per atom-pair binding compounds BN, AIN, GaN, and InN by using the self-(cohesive) energy and melting temperature comes near that of consistent full potential linear augmented plane wave «FP their bulk value with increasing the particle size and same as the LAPW) method. Zoroddu et al. [7] have computed bulk bulk material when the particle size is above than tOO nm.properties as structure and cohesion, formation enthalpies, Keywords-Semiconductors; Size effect; B inding energy; spontaneous polarizations and piezoelectric constants, and Melting temperature; Nano-particle; Nano-c1uster. elastic constants of the zinc-blende and wurtzite III-V nitrides