Dephasing effect on transport of a graphene p–n junction in a quantum Hall regime

Chen, Jiang-chai; Zhang, Hui; Shen, Shun-Qing; Sun, Qing-Feng

doi:10.1088/0953-8984/23/49/495301

Cited by 21 publications

(26 citation statements)

References 30 publications

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“…In fact, the average among a large ensemble of disorder configuration is equivalent to consider the dephasing effect. 45 because all the curves in Fig.10(a) arrive their peaks at φ = ±π, arrive their valleys at φ = 0 and converge at φ = ±π/2 with G = 0.5e 2 /h. Moreover, ϕ = 0 is also illustrated in Fig.10(b-d) since the conductance presents as a plateau at G = 0.5e 2 /h in all these figures at φ = π/2, pointing to ϕ = 0 in Eq.…”

Section: Effect Of Disorder On the Transport Through Ti Pn Junctionmentioning

confidence: 95%

Quantum transport through three-dimensional topological insulator p-n junction under magnetic field

Dai

Zhou

et al. 2018

Phys. Rev. B

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The 3D topological insulator (TI) PN junction under magnetic fields presents a novel transport property which is investigated both theoretically and numerically in this paper. Transport in this device can be tuned by the axial magnetic field. Specifically, the scattering coefficients between incoming and outgoing modes oscillate with axial magnetic flux at the harmonic form. In the condition of horizontal mirror symmetry, the initial phase of the harmonic oscillation is dependent on the parities of incoming and outgoing modes. This symmetry is broken when a vertical bias is applied which leads to a kinetic phase shift added to the initial phase. On the other hand, the amplitude of oscillation is suppressed by the surface disorder while it has no influence on the phase of oscillation. Furthermore, with the help of the vertical bias, a special (1,-2) 3D TI PN junction can be achieved, leading to a novel spin precession phenomenon. arXiv:1808.07774v1 [cond-mat.mes-hall]

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Section: Effect Of Disorder On the Transport Through Ti Pn Junctionmentioning

confidence: 95%

Quantum transport through three-dimensional topological insulator p-n junction under magnetic field

Dai

Zhou

et al. 2018

Phys. Rev. B

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“…Throughout we take the width of a hexagon as the unit of length. The potential (18) interpolates smoothly between a pn interface parallel to the lead's zigzag edge and an interface intersecting the zigzag edge of the scattering region at angle α with the boundary normal. The lengths l pn and ξ determine the width of the pn junction and the length scale over which the orientation of the pn interfaces between the angles π/6 (in the lead) and α (at the intersection with the sample boundary).…”

Section: Numerical Calculation Of the Valley Isospinmentioning

confidence: 99%

Valley isospin of interface states in a graphene pn junction in the quantum Hall regime

Trifunovic

Brouwer

2019

Phys. Rev. B

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In the presence of crossed electric and magnetic fields, a graphene ribbon has chiral states running along sample edges and along boundaries between p-doped and n-doped regions. We here consider the scattering of edge states into interface states, which takes place whereever the pn interface crosses the sample boundary, as well as the reverse process. For a graphene ribbon with armchair boundaries, the evolution of edge states into interface states and vice versa is governed by the conservation of valley isospin. Although valley isospin is not conserved in simplified models of a ribbon with zigzag boundaries, we find that arguments based on isospin conservation can be applied to a more realistic modeling of the graphene ribbon, which takes account of the lifting of electron-hole degeneracy. The valley isospin of interface states is an important factor determining the conductance of a graphene pn junction in a quantizing magnetic field.

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“…Here, a square lattice is adopted for terminal 6 to avoid the appearance of a gap for the armchair edge of the honeycomb lattice 24 in the case of a narrow terminal 6. In the tight-binding representation, the Hamiltonian of the device is given by [25][26][27][28] …”

Section: Model and Calculationmentioning

confidence: 99%

Current oscillation of snake states in graphenep-njunction

2012

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Snake states in a six-terminal graphene p-n junction are investigated under a perpendicular magnetic field. The current oscillation with varying magnetic field appears due to the presence of snake states at the p-n interface. At a fixed magnetic field, the periodic properties of currents with respect to the geometric structures, such as the graphene ribbon width and the location of the incident terminal, are also shown. We extract the values of the width and the location corresponding to the maximums of the current and plot them versus their sequence number. They form a straight line, which shows that the oscillation is periodic. The periods decrease with increasing magnetic field. The order of magnitude of periods and their tendencies with varying a magnetic field are consistent with those predicted from semiclassical motions. Finally, for a smooth potential, the snake states still survive and the oscillation phase and the oscillation period with respect to the location of the incident terminal are almost unchanged, but the period with respect to the width of the ribbon is reduced.

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Dephasing effect on transport of a graphene p–n junction in a quantum Hall regime

Cited by 21 publications

References 30 publications

Quantum transport through three-dimensional topological insulator p-n junction under magnetic field

Quantum transport through three-dimensional topological insulator p-n junction under magnetic field

Valley isospin of interface states in a graphene pn junction in the quantum Hall regime

Current oscillation of snake states in graphenep-njunction

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