2011
DOI: 10.1143/jpsj.80.034704
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Dephasing of Excitonic Polaritons Confined in GaAs Thin Films

Abstract: We report the dephasing of excitonic polaritons due to propagation in GaAs thin films measured using a reflectiontype pump-probe technique. The rise time of the transient signal due to the propagation of excitonic polaritons decreases with an increase in temperature. This decrease originates from the dephasing of excitonic polaritons. From the analysis based on exciton-phonon scattering, the interaction with optical phonons mainly characterizes the dephasing process of exciton polaritons. Moreover, the result … Show more

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Cited by 3 publications
(3 citation statements)
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“…The Al 0:3 Ga 0:7 As barrier layer has sufficient thickness to confine the excitons in the GaAs thin films. 11,[19][20][21] The GaAs layer thickness is larger than the exciton Bohr radius (11 nm); therefore, the center-of-mass motion of excitons is confined. The transient response was measured at 4 K by using a reflection-type pump-probe technique.…”
Section: Methodsmentioning
confidence: 99%
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“…The Al 0:3 Ga 0:7 As barrier layer has sufficient thickness to confine the excitons in the GaAs thin films. 11,[19][20][21] The GaAs layer thickness is larger than the exciton Bohr radius (11 nm); therefore, the center-of-mass motion of excitons is confined. The transient response was measured at 4 K by using a reflection-type pump-probe technique.…”
Section: Methodsmentioning
confidence: 99%
“…RESULTS AND DISCUSSION Figure 1(a) shows the PL spectrum for the evaluation of exciton energies. By comparison of their peak energies with the calculation results for exciton energies based on the model of quantization of the center-of-mass motion of excitons, 20,21 we determined the origins of the PL peaks. This calculation does not include the effect of the radiative shift caused by coupling with light fields.…”
Section: Methodsmentioning
confidence: 99%
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