Dephasing of free carriers and excitons in bulk CdTe

Abstract

In this paper we report on the measurements of the dephasing of free carriers and excitons using a selfdiffraction technique in thin platelets of CdTe with different concentration of preparation-induced dislocations. We show that in a high-quality sample at low temperature the characteristic dephasing time constant is 1 ps and 2 ps for free carriers and excitons, respectively. The increased concentration of preparationinduced dislocations leads to much stronger acceleration of the dephasing for free carriers than for excitons. We also discuss the intensity and temperature dependence of the dephasing.