We report experimental observation of the reentrant integer quantum Hall effect in graphene, appearing in the N=2 Landau level. Similar to high-mobility GaAs/AlGaAs heterostructures, the effect is due to a competition between incompressible fractional quantum Hall states, and electron solid phases. The tunability of graphene allows us to measure the B-T phase diagram of the electronsolid phase. The hierarchy of reentrant states suggests spin and valley degrees of freedom play a role in determining the ground state energy. We find that the melting temperature scales with magnetic field, and construct a phase diagram of the electron liquid-solid transition.Electrons confined to two dimensions and subjected to strong magnetic fields can host a variety of fascinating correlated electron phases. One of the most widely studied examples is the fractional quantum Hall effect (FQHE) [1][2][3][4], an incompressible liquid that emerges when the lowest energy Landau levels (LLs) are partially filled. However, the incompressible FQHE liquids are not the only correlated phases that can emerge within partially filled LLs and generically compete with the formation of interaction-driven electron solids, such as the Wigner crystal [5][6][7][8], and the bubble [9][10][11][12][13][14][15][16][17][18] and stripe charge density wave states [9,11,12,16,17,19].In GaAs/AlGaAs heterostructures, the competition between these different phases, particularly developed in the N = 1 and 2 LL, gives rise to a reentrant integer quantum Hall effect (RIQHE) [14,[20][21][22][23]. This is characterized by the emergence of vanishing longitudinal resistance at fractional filling between the usual sequence of FQHE states, but with Hall conductivity restored to the closest integer value. Numerous experimental [10,14,[24][25][26] and theoretical studies [11,12,27] favor a collective origin for the RIQHE where the emergent electron solid is pinned by the underlying impurity potential. However, many of the experimentally reported details, such as the relative energy scales between different RIQHE states and apparent particle-hole asymmetry within a LL [14,25] remain poorly understood.The universality of the integer and fractional QHE found in a wide variety of high mobility 2D electron systems suggests that the formation of the electron solid should be equally ubiquitous. However, observation of the RIQHE has so far remained conspicuously limited to GaAs heterostructures. In this Letter, we report experimental observation of a RIQHE in monolayer graphene, appearing near 0.33 partial filling of the N = 2 LL, together with weakly formed FQHE states at 1/5 in this same LL. Our results are in excellent agreement with recent theoretical calculations that suggest that the solid phase is stabilized and dominates over the FQHE liquid in graphene at these filling fractions [28][29][30]. The wide tunability of the carrier density in graphene allows us to map the evolution in both magnetic field and temperature of four distinct RIQHE states appearing within the lower ...