2009
DOI: 10.1002/jrs.2424
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Depolarization effects in tip‐enhanced Raman spectroscopy

Abstract: 1 - ArticleTip-enhanced Raman spectroscopy has proven to be a promising technique for stress/strain mapping of silicon-based semiconductor devices on the nanometer scale. Field enhancement factors of up to 104 have been reported and a spatial resolution down to 20 nm has been claimed through exploiting far-field suppression techniques based on an appropriate choice of the excitation/detection polarization states. In this paper, we show that depolarization of light due to scattering from the tip plays a key rol… Show more

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Cited by 32 publications
(37 citation statements)
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“…[118][119][120] Here Raman spectroscopy is of particular interest since engineered stress/strain fields used to tune charge carrier mobilities in devices could be visualized by probing local phonon energies. Such studies, however, are impeded by the the significant signal background from the bulk (see Section 4).…”
Section: Applications Of Tip-enhanced Raman Scatteringmentioning
confidence: 99%
“…[118][119][120] Here Raman spectroscopy is of particular interest since engineered stress/strain fields used to tune charge carrier mobilities in devices could be visualized by probing local phonon energies. Such studies, however, are impeded by the the significant signal background from the bulk (see Section 4).…”
Section: Applications Of Tip-enhanced Raman Scatteringmentioning
confidence: 99%
“…TERS has proven to be a promising technique for stress/strain mapping of Si-based semiconductor devices on the nanometer scale. Merlen et al [54] show that depolarization of light due to scattering from the tip plays a key role in the selective enhancement of the one-phonon optical mode peak at 520 cm −1 with respect to the two-phonon modes. High-spatial-resolution stress mapping of Si device structures is in high demand throughout electronic industry.…”
Section: Tip-enhanced Raman Spectroscopy (Ters)mentioning
confidence: 99%
“…Numerical simulations made by Sun and Shen reveal that the optimal angle between the incident electric field and the axis of a silver tip is in the [30][31][32][33][34][35] • range, which corresponds to 55…”
Section: Coupling Of the Optical Setup To The Nanopositioningmentioning
confidence: 99%
“…Consequently, in backscattering configuration, the background signal due to the far-field is higher than in transmission mode. This problem can be partially solved by using suitable light polarization [32,33]. In spite of this drawback, the backscattering configuration is very interesting due to its versatility.…”
Section: Introductionmentioning
confidence: 99%