2000
DOI: 10.1103/physrevb.62.9939
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Depolarization shift of the in-plane polarized interlevel resonance in a dense array of quantum dots

Abstract: We have investigated experimentally the midinfrared normal-incidence response of holes confined in an array of Ge/Si self-assembled quantum dots. The dots have a lateral size of about 15 nm and a density 3 ϫ10 11 cm Ϫ2 . An in-plane polarized absorption in the 70-90 meV energy range is observed and attributed to the transition between the first two states in the dots. As the hole concentration in the dot ground state is increased, the absorption peak shifts to higher energies, its linewidth is reduced, and the… Show more

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Cited by 23 publications
(11 citation statements)
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“…In this section, we describe a set of experiments in which we have studied hopping transport in Si metaloxide-semiconductor field-effect structures containing a two-dimensional array of Ge self-assembled quantum dots as a conductive channel. 91 The dots are separated from each other by weakly doped silicon, and the only conduction mechanism at low temperatures is tunneling of holes between them. The pseudomorphic Ge islands grown epitaxially on a Si(001) surface exhibit a large band discontinuity in the valence band and can be viewed as doping "artificial atoms."…”
Section: Hole Transport and Correlation Effectsmentioning
confidence: 99%
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“…In this section, we describe a set of experiments in which we have studied hopping transport in Si metaloxide-semiconductor field-effect structures containing a two-dimensional array of Ge self-assembled quantum dots as a conductive channel. 91 The dots are separated from each other by weakly doped silicon, and the only conduction mechanism at low temperatures is tunneling of holes between them. The pseudomorphic Ge islands grown epitaxially on a Si(001) surface exhibit a large band discontinuity in the valence band and can be viewed as doping "artificial atoms."…”
Section: Hole Transport and Correlation Effectsmentioning
confidence: 99%
“…91 190 Direct examination of the role of collective coupling for the in-plane polarized interlevel absorption of a stack of ten dense arrays of Ge/Si SAQDs has been made in Ref. [91]. The dots have a lateral size of about 15 nm and a density 3 × 10 11 cm −2 in each layer.…”
Section: Depolarization Shift Of the Interlevel Resonancementioning
confidence: 99%
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“…In a series of comparatively recent studies it was shown by different experimental methods [capacitance spectroscopy (Yakimov et al, 1998), hopping transport , admittance spectroscopy (Yakimov, Adkins et al, 1999) and optical spectroscopy (Yakimov et al, 2000)] that at a certain thickness of the epitaxic Ge ®lm on Si(001) in the electronic spectra of the heterostructures there appear features associated with the zero-dimensional density of states. These features are due to the dimensional quantization of the hole spectrum in the Ge islands appearing during disturbed two-dimensional growth.…”
Section: Introductionmentioning
confidence: 99%
“…Pusep and co-workers 27,28 studied the plasma response of electrons in disordered superlattices, while Yakimov et al 29 analyzed the depolarization shift of the interlevel resonance in a dense array of quantum dots.…”
Section: Introductionmentioning
confidence: 99%