Depositing Silicon Nitride Layers at Low Temperature Using a Photochemical Reaction

Collet, M.G.

doi:10.1149/1.2411718

Cited by 23 publications

(5 citation statements)

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“…For a more in depth general examination of photo-assisted thin film deposition, readers are referred to the review of Hanabusa 146 and the system design overview by Lian et al 546 Concerning microelectronic device fabrication, perhaps the first application explored for photo-assisted deposition were the early reports by Frieser 547 and Kumagawa et al, 548 to reduce the growth temperature during Si vapor phase epitaxy by incorporating UV light irradiation of the growth surface. Shortly after this ground breaking work, Hg sensitized photo-assisted CVD was subsequently examined as a means to lower the deposition temperature of SiO2 498 and SiN 549,550,551 thin films for applications as lateral transistor and vertical metal interconnect electrical isolation, barrier layers, and final passivation. Due to the Hg toxicity and metal contamination concerns mentioned previously, this work was quickly followed by demonstrations of direct photolytic CVD of SiO2 , 526,552 and SiN 500,553,554 using ArF 499 excimer lasers or Hg, 500,551,553 D2, 526 or excimer 552 lamps.…”

Section: V32 Uv-assisted Film Depositionmentioning

confidence: 99%

Impact of VUV photons on SiO2 and organosilicate low-k dielectrics: General behavior, practical applications, and atomic models

Baklanov

Jousseaume

Рахимова

et al. 2019

Applied Physics Reviews

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This paper presents an in-depth overview of the application and impact of UV/VUV light in advanced interconnect technology. UV light application in BEOL historically was mainly motivated by the need to remove organic porogen and generate porosity in organosilicate (OSG) low-k films. Porosity lowered the film's dielectric constant, k, which enables one to reduce the interconnect wiring capacitance contribution to the RC signal delay in integrated circuits. The UV-based low-k film curing (λ > 200 nm) proved superior to thermal annealing and electron beam curing. UV and VUV light also play a significant role in plasma-induced damage to pSiCOH. VUV light with λ < 190–200 nm is able to break Si-CH3 bonds and to make low-k materials hydrophilic. The following moisture adsorption degrades the low-k properties and reliability. This fact motivated research into the mechanisms of UV/VUV photon interactions in pSiCOH films and in other materials used in BEOL nanofabrication. Today, the mechanisms of UV/VUV photon interactions with pSiCOH and other films used in interconnect fabrication are fairly well understood after nearly two decades of research. This understanding has allowed engineers to both control the damaging effects of photons and utilize the UV light for material engineering and nanofabrication processes. Some UV-based technological solutions, such as low-k curing and UV-induced stress engineering, have already been widely adopted for high volume manufacturing. Nevertheless, the challenges in nanoscaling technology may promote more widespread adoption of photon-assisted processing. We hope that fundamental insights and prospected applications described in this article will help the reader to find the optimal way in this wide and rapidly developing technology area.

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Section: V32 Uv-assisted Film Depositionmentioning

confidence: 99%

Impact of VUV photons on SiO2 and organosilicate low-k dielectrics: General behavior, practical applications, and atomic models

Baklanov

Jousseaume

Рахимова

et al. 2019

Applied Physics Reviews

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“…then measuring the conductivity in the dark. The increase in conductivity due to preillumination has been called a "photomemory effect" and has been studied by several investigators (7), especially by Ku~el (8). In order to gain information which might explain these results, in particular the photomemory effect, we have been led to a consideration of electron trapping as a possible explanation for the variations in the conductivity results and a possible correlation between the conductivity and optical data.…”

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confidence: 99%

Control of the Deposition of Silicon Nitride Layers by 2537Å Radiation

Brekel

Severin

1972

J. Electrochem. Soc.

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Thin Si3N~ films were deposited on polished Si crystals at low temperatures using the Hg-photosensitized reaction of N2H4 and Sill4. The deposition rate increases linearly with the light intensity. The experiments showed that destructive interference between multiply reflected beams has a pronounced effect in limiting film thickness to a well-defined value with a high degree of uniformity over the slice.The formation of silicon nitride films by a number of methods has been reported including the reaction of ammonia and silane under an rf discharge (1), the pyrolitic reaction of the silane-ammonia system (2, 3), the silane-hydrazine system (3) or the silicon tetra-

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“…Manuscript received Oct. 14, 1971. This was Paper 63 presented at the Cleveland, Ohio, Meeting of the Society, Oct. [3][4][5][6][7] 1971.…”

Section: Acknowledgmentmentioning

confidence: 99%

“…It has very attractive chemical and physical properties which have encouraged its use as a coating material for microelectronic devices. Several methods (1)(2)(3)(4)(5)(6)(7)(8)(9)(10)(11)(12)(13)(14) of preparing silicon nitride have been reported in the literature. The three major methods for depositing silicon nitride on high melting substrates are: (i) chemical vapor deposition, (ii) reactive sputtering, and (iii) rf glow discharge.…”

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confidence: 99%

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Silicon Nitride Coatings on Copper

Audisio

Leidheiser

1972

J. Electrochem. Soc.

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Silicon nitride was deposited on copper substrates at room temperature by a reactive sputtering technique. The coatings, in the thickness range 500–1500Aå, were amorphous, transparent, and had glass‐like smoothness. They were tightly adherent to the substrate. Infrared analysis indicated the coatings were pure silicon nitride when precautions were taken to eliminate oxygen and water from the system. The coatings exhibited dielectric constants of 8–11 with a dissipation factor less than 10−2 at 1000 cycles/sec. The ductility approached 1% as measured on a copper substrate. The coatings reduced the charge passing across the metal/electrolyte interface when the coated samples were anodically treated in sodium hydroxide, sulfuric acid, and phosphoric acid. The coatings provided good resistance to attack of the copper surface in ammonium hydroxide and sodium hypochlorite; provided moderate protection in concentrated acids, mediocre protection in sodium thiosulfate and sodium sulfide solutions, and very little protection in concentrated nitric acid.

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Depositing Silicon Nitride Layers at Low Temperature Using a Photochemical Reaction

Abstract: not Available.

Cited by 23 publications

References 1 publication

Impact of VUV photons on SiO2 and organosilicate low-k dielectrics: General behavior, practical applications, and atomic models

Impact of VUV photons on SiO2 and organosilicate low-k dielectrics: General behavior, practical applications, and atomic models

Control of the Deposition of Silicon Nitride Layers by 2537Å Radiation

Silicon Nitride Coatings on Copper

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