Deposition and characterisation of silicon grown in a SiF4/SiH4/H2 mixture for TFT applications

Addition of SiF4 to standard SiH4+H2 plasma: an effective way to reduce oxygen contamination in μc‐Si:H films

“…The deposition of µc-Si:H in UHV system with controllable leak has shown that oxygen not only affects electronic properties of the µc-Si:H, but also can disturb the growth of crystallites [3]. It has been proposed by several groups that a deposition of µc-Si:H using halogenated precursors can reduce the contamination by oxygen [4,5]. Although the use of SiF 4 or SiCl 4 as precursors for µc-Si growth provides materials with excellent properties [6,7], processes based on halogenated precursors need further adaptation to industrial requirements.…”