Deposition and Chemical Composition of Silicon Oxynitride from Methylsilazane in Ammonia and Nitrous Oxide

Abstract

Amorphous silicon oxynitride films were prepared by chemical vapor deposition on silicon (100) substrates from gas mixtures of methylsilazane, [CH7SiHNH], ammonia, and nitrous oxide in the temperature range of 650 to 825°C at a pressure of 760 Torr. Oxynitride films with a wide range of compositions were formed by varying the concentration of nitrous oxide in the gas mixture. A stable SiON9:H phase constituted the main chemical structure in the films. Controllable deposition conditions were found which permit tailoring of the refractive index between 1.54 and 1.85, suggesting possible application in gradient index optics.

Crystallization behavior of three-dimensional silica fiber reinforced silicon nitride composite

“…As shown in the literature [7][8][9][10], the FT-IR spectra of silicon oxynitrides exhibited intermediate wavenumbers located between $1080 and $835 cm À1 , depending on the relative content of oxygen and nitrogen, and the absorption peak shifts to higher wavenumbers with the increase (decrease) of oxygen (nitrogen) content. Therefore, in comparison with the statements in the above literature, the new peaks between 1099 and 831 cm À1 in Fig.…”

Embrittlement Behaviour and Mechanism of Silica Fibres with Polymer-Derived Silicon Nitride Coatings

“…As shown in literature [11][12][13][14], the FT-IR spectra of silicon oxynitrides exhibited intermediate wavenumbers located between about 1100 and 800cm -1 , depending on the relative content of oxygen and nitrogen atoms. In this study, the variation of the peaks at 1100-800 cm -1 in Fig.3 could also result from the silicon oxynitrides due to fibre/coating reactions.…”

Partially Crystallized Ultrathin Interfaces between GaN and SiNx Grown by Low-Pressure Chemical Vapor Deposition and Interface Editing

“…Generally, silicon oxynitride can be prepared by chemical vapor deposition (CVD) from the reaction of silane (SiH 4 ) or dichlorosilane (SiH 2 Cl 2 ) in mixtures of ammonia and nitrous oxide (N x O) at temperatures of 650 to 825 °C . However, the shifted N 1s core level for N–O (400–405 eV) bonding was not observed in our XPS data before the reaction (Figure ), as in King’s et al work, or in the residual reactants after the reaction (Figure ).…”