Deposition and crystallization of amorphous GaN buffer layers on Si(111) substrates

Enhanced field emission from ZnO nanowire arrays utilizing MgO buffer between seed layer and silicon substrate

“…Meanwhile, buffer layers including amorphous and crystalline ones are widely used in the field of 2D heteroepitaxial film growth on various substrates to improve the active film quality [22,23]. One of the popular buffer layers for ZnO epitaxy is MgO [22][23][24].…”

“…One of the popular buffer layers for ZnO epitaxy is MgO [22][23][24]. MgO is thermodynamically stable, and also has low dielectric constant.…”

Synthesis, thermal stability, and photocatalytic activity of nanocrystalline gallium nitride via the reaction of Ga2O3 and NH4Cl at low temperature

“…Traditionally, many approaches have been developed for the preparation of gallium nitride, such as metal organic vapor phase extension (MOVPE) [11][12][13][14], the molecular beam extension (MBE) [15,16], the hydride vapor phase extension (HVPE) [17] and alumina templates method [18,19]. Qian and co-workers [20] reported a benzene-thermal route to prepare nanocrystalline gallium nitride.…”

Advanced buffers for AlGaN/GaN HEMT and InGaN/GaN MQW on silicon substrates

“…Common to all growth processes, TMAl is pre-introduced into the reactor before switching on the ammonia. This procedure is necessary due to the poor nucleation of GaN on Si (resulting in a migration of Si to the surface of the GaN layers subsequently deposited at higher temperatures [6,7]) and to prevent nitridation (because of the reaction of nitrogen with Si) and Ga diffusion into the substrate (forming a conductive channel at the substrate surface attributed to the unintentional doping of the substrate by Ga atoms). In this work, at first the duration of the in-situ Al pre-deposition was varied and its influence on the GaN buffer layer and on HEMT structures on silicon (111) was investigated.…”