Deposition and etching behaviour of boron trichloride gas at silicon surface

Muroi, Mitsuko; Yamada, A.; Saito, Ayumi; Habuka, Hitoshi

doi:10.1016/j.jcrysgro.2019.125301

Cited by 8 publications

(4 citation statements)

References 21 publications

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“…Because the boron production rate due to the BCl x decomposition by the hydrogen gas, based on Eq. 5, was considered to be significantly low at 800 °C, 20 the high deposition rate and the high boron concentration in this study might indicate the co-existence of the chemical reactions based on Eqs. 5, 15 and 16.…”

Section: Bclmentioning

confidence: 79%

“…Taking into account that the boron deposition rate by the boron trichloride gas at 800 °C was significantly low, 20 the k B2 value could be significantly small; the…”

Section: Bclmentioning

confidence: 99%

“…In a previous study, 20 the overall chemical behavior of boron trichloride gas at the silicon surface was studied over a wide temperature range. The boron trichloride behavior at the silicon surface was classified into three groups, that is, (i) the boron adsorption at a temperature lower than 800 °C, (ii) the boron film deposition between 900 and 1000 °C and (iii) silicon surface etching at higher than 1050 °C.…”

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confidence: 99%

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Boron-Silicon Film Chemical Vapor Deposition Using Boron Trichloride, Dichlorosilane and Monomethylsilane Gases

Muroi

Otani

Habuka

2021

ECS J. Solid State Sci. Technol.

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A boron-silicon film was formed by chemical vapor deposition at 800 °C and atmospheric pressure using boron trichloride, dichlorosilane and monomethylsilane gases. With the increasing boron trichloride gas flow rate at the fixed dichlorosilane gas flow rate, the deposition rate and the boron concentration decreased and saturated, respectively, following the rate theory assuming the Langmuir-type model. The obtained film was amorphous and dense without any voids. The monomethylsilane and the silicon hydrides, produced by the thermal decomposition of the monomethylsilane gas, were considered to help decomposing the intermediate boron species at the surface. The boron concentrations of 20%–40%, significantly greater than the solubility in the crystalline silicon, were concluded to be obtained using the boron trichloride gas.

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Section: Bclmentioning

confidence: 79%

“…Taking into account that the boron deposition rate by the boron trichloride gas at 800 °C was significantly low, 20 the k B2 value could be significantly small; the…”

Section: Bclmentioning

confidence: 99%

mentioning

confidence: 99%

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Boron-Silicon Film Chemical Vapor Deposition Using Boron Trichloride, Dichlorosilane and Monomethylsilane Gases

Muroi

Otani

Habuka

2021

ECS J. Solid State Sci. Technol.

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“…The wafer was rotated at 10 rpm and heated by halogen lamps through the transparent quartz glass chamber. The wafer temperature was fixed at about 900˚C, at which temperature the boron trichlorosilane gas had the highest boron film formation rate [6].…”

Section: Methodsmentioning

confidence: 99%

Boron-Silicon Thin Film Formation Using a Slim Vertical Chemical Vapor Deposition Reactor

Kamochi¹,

Motomiya²,

Habuka³

et al. 2023

ACES

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A boron-silicon film was formed from boron trichloride gas and dichlorosilane gas at about 900˚C in ambient hydrogen at atmospheric pressure utilizing a slim vertical cold wall chemical vapor deposition reactor designed for the Minimal Fab system. The gas flow rates were 80, 20 and 0.1 -20 sccm for the hydrogen, dichlorosilane and boron trichloride gases, respectively. The gas transport condition in the reactor was shown to quickly become stable when evaluated by quartz crystal microbalances at the inlet and outlet. The boron-silicon thin film was formed by achieving the various boron concentrations of 0.16% -80%, the depth profile of which was flat. By observing the cross-sectional TEM image, the obtained film was dense. The boron trichloride gas is expected to be useful for the quick fabrication of various materials containing boron at significantly low and high concentrations.

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Reaction of BCl3 with H- and Cl-terminated Si(1 0 0) as a pathway for selective, monolayer doping through wet chemistry

Silva-Quinones

Butera

et al. 2020

Applied Surface Science

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Deposition and etching behaviour of boron trichloride gas at silicon surface

Cited by 8 publications

References 21 publications

Boron-Silicon Film Chemical Vapor Deposition Using Boron Trichloride, Dichlorosilane and Monomethylsilane Gases

Boron-Silicon Film Chemical Vapor Deposition Using Boron Trichloride, Dichlorosilane and Monomethylsilane Gases

Boron-Silicon Thin Film Formation Using a Slim Vertical Chemical Vapor Deposition Reactor

Reaction of BCl3 with H- and Cl-terminated Si(1 0 0) as a pathway for selective, monolayer doping through wet chemistry

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