Deposition and structural characterization of ZrO2 and yttria-stabilized ZrO2 films by chemical vapor deposition

Kim, J.S.; Marzouk, H. A.; Reucroft, P. J.

doi:10.1016/0040-6090(94)06274-o

Cited by 87 publications

(41 citation statements)

References 16 publications

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“…Challenging results are obtained when oxygen is mixed with water vapor: deposited thin films show no cracks and are well adherent to the substrate with large crystalline domains and a main monoclinic phase. So, our data seem to confirm the hypothesis of some authors [10] that the mechanism of ZrO 2 formation in the presence of oxygen should be different from that occurring in an oxygen/water vapor mixture. In fact, quite different morphology and structure were observed in the two cases, where both stress and grain size affect the growing phase.…”

Section: Resultssupporting

confidence: 93%

“…The XPS spectra of ZrO 2 deposited on polycrystalline Al 2 O 3 at 400 C and 550 C are reported in Figures 2b and 2c, respectively. The characteristic peak positions of Zr 4+ and O 2± are in agreement with literature data [10] and the C 1s peak, after 10 min of ion sputtering, reduced to 10 % in zirconia films deposited at 400 C while it became almost negligible at 550 C. This difference in car- This behavior is in agreement with the formation of some particular ionic species detected by mass spectrometric analysis of compounds 2 and 3.…”

Section: Film Growth In a Flux Of Oxygensupporting

confidence: 90%

“…The FWHM is narrower than that obtained in deposits grown in oxygen, suggesting that crystalline domain size is larger when water vapor is added to the oxygen flux. The average crystallite size for monoclinic zirconia grown on alumina at 400 C is 40 nm, and rises to 60 nm at 550 C. This can explain the absence of a cracked surface, as the observed values are well above the critical value of 10±15 nm, reported for the tetragonal to monoclinic (t to m) transformation, [10] therefore no volume change occurs in the films. The predominance of the monoclinic Table 2.…”

Section: Film Growth In a Flux Of Oxygen And Water Vapor Using Dimethmentioning

confidence: 55%

“…Kim et al [10] suggest that this effect is due to the removal of carbon species, coming from an incomplete decomposition of the precursor, by H 2 O molecules. These could favor the formation of stable organic leaving species, allowing a more efficient and fast oxide growth.…”

Section: Film Growth In a Flux Of Oxygen And Water Vapor Using Dimethmentioning

confidence: 98%

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MOCVD Growth and Characterization of ZrO2 Thin Films Obtained from Unusual Organo-Zirconium Precursors

Codato

Carta

Rossetto

et al. 1999

Chem. Vap. Deposition

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ZrO 2 thin films were deposited on polycrystalline alumina, glass, á100ñ silicon, and stainless steel substrates by metal-organic chemical vapor deposition (MOCVD). Depositions were carried out in a hot wall reactor at reduced pressure (0.6 torr) in the temperature range 400±550 C, using zirconium cyclopentadienyl derivatives as precursors, both in a flux of oxygen and of an oxygen/water vapor mixture. High quality zirconia films with high growth rates were obtained by employing (C 5 H 5 ) 2 Zr(CH 3 ) 2 . Scanning electron microscopy (SEM) images display, in both cases, a tapered polycrystalline columnar structure of the deposits. Films grown under O 2 flux show a cracked surface with a variable carbon contamination depending on the experimental conditions, while those prepared in a O 2 /H 2 O mixture are smooth and well adherent to the substrate with 5 % carbon presence according to X-ray photoelectron spectroscopy (XPS) analysis. X-ray diffraction shows that samples grown in O 2 flux consist of the tetragonal phase with a small amount of the monoclinic polymorph, whose percentage increases with the growth temperature. The presence of water vapor led to larger crystalline domains predominantly composed of monoclinic phase.

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Section: Resultssupporting

confidence: 93%

Section: Film Growth In a Flux Of Oxygensupporting

confidence: 90%

Section: Film Growth In a Flux Of Oxygen And Water Vapor Using Dimethmentioning

confidence: 55%

Section: Film Growth In a Flux Of Oxygen And Water Vapor Using Dimethmentioning

confidence: 98%

See 2 more Smart Citations

MOCVD Growth and Characterization of ZrO2 Thin Films Obtained from Unusual Organo-Zirconium Precursors

Codato

Carta

Rossetto

et al. 1999

Chem. Vap. Deposition

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“…It is known that the binding energy difference in between the SiO 2 and Si is about 4.4 eV. 44,45 A lower Si2p binding energy with respect to SiO 2 suggests the non-stoichiometric SiO x (x<2) or oxygen vacancy in SiO 2 membrane. Similarly, the peak binding energies of O1s spectra are increased to 533.1 eV for both pH2 and pH 12 than the peak binding energy of 532.1 eV without pH solution, which is owing to non-stoichiometric SiO 2 or SiO x .…”

Section: Resultsmentioning

confidence: 99%

Highly Reliable Label-Free Detection of Urea/Glucose and Sensing Mechanism Using SiO₂and CdSe-ZnS Nanoparticles in Electrolyte-Insulator-Semiconductor Structure

Kumar

Maikap

Singh

et al. 2016

J. Electrochem. Soc.

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A simple, label-free and cost effective sensor have been studied for reliable urea/glucose sensing, and common serum analyte detection comparable with market available urea "Assay Kit" is also performed by using SiO 2 and CdSe-ZnS nanoparticles in electrolyte-insulator-semiconductor structure for the first time. Thermally grown SiO 2 membrane has shown lower pH detection limit (0.081) and lowest drift rate (2.9 mV/hr) than those of the sputtering and E-beam deposited SiO 2 membranes. The urea detection at physiological buffer pH 7.4 with sensitivity of ∼1.6 mV/mg.dl −1 at linear range of 6 to 36 mg/dl is shown. The pH detection limit is further reduced (0.074) by using chaperonin protein mediated CdSe-ZnS nanoparticles assembly over SiO 2 surface owing to high pH sensitivity of 55 mV/pH. The sensing mechanism is due to the SiO x content decreased with increasing pH value. This suggests the lower H + ions absorption on the sensing membrane surface, which is observed by X-ray photo-electron spectroscopy. The glucose concentration is detected by using the core-shell CdSe-ZnS nanoparticles through H 2 O 2 sensing because of reduction/oxidation (redox) properties of Zn as well as Zn 2+ ions generation. Due to the high catalytic activity for H 2 O 2 sensitivity, low detection limit of 1 μM is obtained, which will help to detect glucose using this bio-chip in future. The surface charge as well as potential variation of sensing membranes corresponds to ionic concentration can be used for detection of bio-molecules. [3][4][5] Basically, the pH as well as ionic concentration change (H + and OH − ) is major product of enzymatic reaction with analytes (urea, creatinine, acetylcholine, tributyrine, glucose, etc. 6-8 ), which can be measured by using electrolyte-insulator-semiconductor (EIS) structures. Among those analytes, urea and glucose are the very common potential biomarkers for diagnosis of common diseases such as heart failure, diabetes, and kidney injury. [9][10][11][12] Generally, the urea concentration has been detected through pH change. 13,14 They have reported the detection of glucose concentration by measuring the resultant pH change in presence of glucose oxidase. However, small change of pH restricts the glucose measurement at lower concentration and encourages to sense other catalysis product. Hydrogen-peroxide (H 2 O 2 ) is also a catalysis product of selective enzymatic degradation of glucose, cholesterol, lactate, and so on. [15][16][17] In this regards, the sensing membrane in EIS structure has a key role to detect pH or H 2 O 2 for easy use in our daily life with low cost. Consequently, many materials such as SiO 2 , Si 3 N 4 , Al 2 O 3 , HfO 2 , and Ta 2 O 5 have been investigated for pH sensing.18-21 Hal et al. 22 have reported the high intrinsic buffer capacity of SiO 2 at low concentrated basic pH buffer results into higher surface sites and membrane-electrolyte interface reactivity. Due to very simple structure and good interface with substrate, SiO 2 is a reliable membrane to develop urea senso...

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MOCVD Growth and Characterization of ZrO2 Thin Films Obtained from Unusual Organo-Zirconium Precursors

Codato¹,

Carta²,

Rossetto³

et al. 1999

Chem. Vap. Deposition

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Deposition and structural characterization of ZrO2 and yttria-stabilized ZrO2 films by chemical vapor deposition

Cited by 87 publications

References 16 publications

MOCVD Growth and Characterization of ZrO2 Thin Films Obtained from Unusual Organo-Zirconium Precursors

MOCVD Growth and Characterization of ZrO2 Thin Films Obtained from Unusual Organo-Zirconium Precursors

Highly Reliable Label-Free Detection of Urea/Glucose and Sensing Mechanism Using SiO₂and CdSe-ZnS Nanoparticles in Electrolyte-Insulator-Semiconductor Structure

MOCVD Growth and Characterization of ZrO2 Thin Films Obtained from Unusual Organo-Zirconium Precursors

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Deposition and structural characterization of ZrO2 and yttria-stabilized ZrO2 films by chemical vapor deposition

Cited by 87 publications

References 16 publications

MOCVD Growth and Characterization of ZrO2 Thin Films Obtained from Unusual Organo-Zirconium Precursors

MOCVD Growth and Characterization of ZrO2 Thin Films Obtained from Unusual Organo-Zirconium Precursors

Highly Reliable Label-Free Detection of Urea/Glucose and Sensing Mechanism Using SiO2and CdSe-ZnS Nanoparticles in Electrolyte-Insulator-Semiconductor Structure

MOCVD Growth and Characterization of ZrO2 Thin Films Obtained from Unusual Organo-Zirconium Precursors

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Highly Reliable Label-Free Detection of Urea/Glucose and Sensing Mechanism Using SiO₂and CdSe-ZnS Nanoparticles in Electrolyte-Insulator-Semiconductor Structure