Deposition by plasma-assisted laser ablation and maskless patterning of YBa2Cu3O7−x superconducting thin films

Tejedor, P.; Cagigal, Manuel P.; Vicent, J. L.; Briones, F.

doi:10.1016/0040-6090(94)90404-9

Cited by 1 publication

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“…17,18 The 10 Ϫ5 Torr deposition chamber was made of stainless steel and was provided with an UV quartz window for laser irradiation. The substrate is placed inside the vacuum chamber at a distance of 30 mm from the target and is heated by means of a tungsten filament.…”

Section: Methodsmentioning

confidence: 99%

Effect of SiO2 buffer layers on the structure of SrTiO3 films grown on silicon by pulsed laser deposition

Tejedor

Fuenzalida

Briones

1996

Journal of Applied Physics

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Non-radiative complete surface acoustic wave bandgap for finite-depth holey phononic crystal in lithium niobate Appl. Phys. Lett. 100, 061912 (2012) Investigation of dielectric and electrical properties of Mn doped sodium potassium niobate ceramic system using impedance spectroscopy J. Appl. Phys. 110, 104102 (2011) Determination of depolarization temperature of (Bi1/2Na1/2)TiO3-based lead-free piezoceramics J. Appl. Phys. 110, 094108 (2011) Finite element method simulation of the domain growth kinetics in single-crystal LiTaO3: Role of surface conductivity J. Appl. Phys. 110, 052016 (2011) Additional information on J. Appl. Phys. Thin films of SrTiO 3 were grown by pulsed laser deposition on Si and SiO 2 /Si at 35 and 650°C in a 50 mTorr oxygen discharge ͑300 V͒. The effect of introducing a SiO 2 buffer layer between the Si substrate and the complex oxide on the crystallinity and microstructure of the SrTiO 3 films was investigated at both deposition temperatures. All films grown at 35°C were amorphous. Surface morphology examination by scanning electron microscopy ͑SEM͒ showed that these films were continuous and homogeneous when grown on Si, but were porous and had low-density noninterconnecting lines when grown on SiO 2 /Si. Films prepared at 650°C were polycrystalline and their x-ray-diffraction patterns exhibited peaks corresponding to the ͑001͒, ͑110͒, ͑111͒, and ͑002͒ reflections of the SrTiO 3 cubic phase ͑aϭ3.904 Å͒. The films deposited on SiO 2 /Si were found to grow with a high degree of preferred orientation along the ͑110͒ direction. SEM studies on the surface morphology of the films grown at high temperature showed the presence of a ''rosette'' structure. The mean size of the rosettes was ϳ80 nm in 40-nm-thick films grown on Si and ϳ100 nm in films of similar thickness grown on SiO 2 /Si. Additional atomic force microscopy studies on the topography of these samples indicated that the rosettes were constituted by ϳ35-nm-diam grains. Typical peak-to-valley surface roughness of these films was 0.5-2 nm.

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Section: Methodsmentioning

confidence: 99%