Deposition chemistry and structure of plasma-deposited silicon nitride films from 1,1,3,3,5,5-hexamethylcyclotrisilazane

Brooks, T. A.; Hess, Dennis W.

doi:10.1063/1.341935

Cited by 24 publications

(24 citation statements)

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“…These compounds are of particular interest, since the molecular structure of the initial organosilicon compounds affects the chemical and phase composition, as well as the microstructure of the deposited silicon carbonitride films. A large share of the organosilicon compounds used earlier to obtain silicon carbonitride belongs to the silazane class: hex amethyldisilazane (HMDS) [10,[22][23][24][25][26][27][28][29][30]46], hexame FAINER et al thylcyclotrisilazane [47][48][49][50][51], polysilazanes, etc. At present, there is a continuous search for and synthesis of other organosilicon compounds capable of provid ing new physicochemical and functional properties to their derivatives-silicon carbonitride layers.…”

Section: Introductionmentioning

confidence: 99%

Tris(diethylamino)silane—A new precursor compound for obtaining layers of silicon carbonitride

et al. 2012

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Abstract⎯Silicon carbonitride layers have been obtained by chemical deposition from the gas phase with thermal (LPCVD) and plasma (PECVD) activation of the gas mixture of helium with the new volatile silicon organic compound tris(diethylamino)silane (Et 2 N) 3 SiH (TDEAS) in the temperature region 373-1173 K. Thermodynamic simulation of the deposition processes from the gas mixture (TDEAS + He) in the temper ature interval 300-1300 K and pressure interval from 1 × 10 -2 to 10 mm Hg has revealed the possibility of varying the equilibrium composition of the condensed phase depending on the synthesis temperature and the composition of the initial gas mixture. Physicochemical and functional properties of obtained layers were studied by complex of modern methods. It has been established that the chemical composition of the silicon carbonitride layers obtained by the PECVD method, depending on the deposition conditions, approaches that of silicon oxynitride or nitride, and the composition of those obtained by the LPCVD method approaches that of silicon carbide. The presence of nanocrystals with a phase composition close to the stan dard α Si 3 N 4 phase and of carbon inclusions has been found in the layers.

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Section: Introductionmentioning

confidence: 99%

Tris(diethylamino)silane—A new precursor compound for obtaining layers of silicon carbonitride

et al. 2012

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“…It is noteworthy here that the molecular structure of the starting organosilicon compounds affects the chemical and phase composition, as well as the microstructure of the deposited films of silicon carbonitride. The main part of compounds used for preparation of silicon carbonitride belonged to the class of silazanes: hexamethyldisilazane [11,39,[42][43][44][45][46][47][48][49][50][51][52][53][54], hexamethylcyclotrisilazane [55][56][57][58][59], polysilazanes, etc.…”

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confidence: 99%

From organosilicon precursors to multifunctional silicon carbonitride

Файнер

2012

Russ J Gen Chem

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Films of silicon carbonitride of variable composition are prepared by the method of plasmochemical decomposition of tetramethyldisilazane, hexamethyldisilazane, and hexamethylcyclotrisilazane in the mixture with helium in the temperature range of 373-973 K. The chemical composition of the low temperature films (373-673 K) is described by the formula SiC x N y O z :H, whereas that of high temperature films, by the formula SiC x N y . The films of silicon carbonitride are found to be a nanocomposite material containing an amorphous part and nanocrystals, whose structure is close to the phase α-Si 3 N 4 . Films of the composition SiC x N y O z :H are promising as low-k interlayer dielectrics in ultra-large scale integrated circuits of new generation, as well as protecting antireflective coatings and light-emitting diodes.Nowadays more severe requirements are imposed on the quality of construction materials used in many fields of science and technology. New materials are necessary stable to high temperatures, mechanical wear, abrasion, corrosion and oxidation [1]. That is why various methods are intensively developed for the synthesis of refractory superhard coatings (hardness > 20 GPa), which have long lifetime, enhanced hardness, and are relatively cheap [2]. For example, coatings are made of materials alternative to the expensive diamond coatings. Binary solid compounds like SiC, TiC, TiN can provide an enhanced wear stability, but hardly can possess a wide variety of functional properties.Recent research has shown that coatings on the basis of ternary compounds exceed in their functional properties the coatings based on binary compounds [3]. One of promising ternary materials is silicon carbonitride. It possesses new properties as compared with crystalline binary compounds Si 3 N 4 and SiC. Films of silicon carbonitride possess an exclusive combination of physicochemical properties like high thermal conductivity, thermal stability (up to 1500°C), resistance to oxidation, high hardness, chemical inertness, that makes them ideal wear-and corrosionstable materials for applications in aggressive media, for high-temperature industrial and strategic applications [4][5][6][7][8][9][10]. It is assumed that a high thermal, chemical, and mechanical stability is achieved due to the absence of boundaries between the grains and of the oxides as secondary phases in these coatings. Besides, such properties as low density and good thermal shock resistance, are very important in the future for aerospace, automobile, and other fields of industry. It is known that stainless steel possessing high corrosive stability is rusted when stored for a long time in the open air because of acid rains. To prevent this process, the steel must be coated, for example, with a transparent solid film, like the film of silicon carbonitride [11]. In general, films of silicon carbonitride can be used in various applications, not only as barrier isolating layers, films for protection of flat panel displays, but also for general industrial application.Ad...

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“…Infrared data recorded after five consecutive ALD cycles for the DSBAS and BDEAS ALD processes are shown in Figure , spectra “a” and “b”, respectively. The characteristic infrared signature of SiN x growth is apparent from the strong Si–N–Si antisymmetric stretching mode at ~890 cm −1 , along with the >NH bending at ~1,180 cm −1 and the –NH x ( x = 1, 2) stretching vibrations at ~3,300 cm −1 . The 1,900‐2,400 cm −1 region was deconvoluted (see insets in Figure ) to evaluate the contributions of the cumulated double‐bonded –C x N y and –SiH x ( x = 1, 2, 3) species in the final SiN x films deposited by ALD.…”

Section: Resultsmentioning

confidence: 99%

Surface reactions of aminosilane precursors during N₂ plasma‐assisted atomic layer deposition of SiN_x

Leick

Huijs

Ovanesyan

et al. 2019

Plasma Processes & Polymers

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The surface reactions during atomic layer deposition (ALD) of SiNx were studied using in situ attenuated total reflection Fourier transform infrared spectroscopy. Specifically, di(sec‐butylamino)silane (DSBAS) and bis(diethylamino)silane (BDEAS) were used as the silicon precursors with N 2 plasma as the nitrogen source for SiN x ALD over a temperature range of 225–375°C. The infrared spectra recorded during each ALD half‐cycle provide unambiguous experimental evidence that surface secondary amines (>NH) are the primary reactive sites for chemisorption of DSBAS and BDEAS on a SiN x surface that was exposed to an N 2 plasma. Based on these observations, we predict that most aminosilane precursors will primarily react with surface >NH groups: This observation is contrary to most atomistic‐level simulations for this reaction that predict a high activation energy barrier.

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Deposition chemistry and structure of plasma-deposited silicon nitride films from 1,1,3,3,5,5-hexamethylcyclotrisilazane

Abstract: Articles you may be interested inThe influence of underlying metals on the hydrogen evolution from plasmadeposited silicon nitride films J. Appl. Phys. 71, 958 (1992); 10.1063/1.351321Structure and optical properties of plasmadeposited fluorinated silicon nitride thin films

Cited by 24 publications

References 31 publications

Tris(diethylamino)silane—A new precursor compound for obtaining layers of silicon carbonitride

Tris(diethylamino)silane—A new precursor compound for obtaining layers of silicon carbonitride

From organosilicon precursors to multifunctional silicon carbonitride

Surface reactions of aminosilane precursors during N₂ plasma‐assisted atomic layer deposition of SiN_x

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Deposition chemistry and structure of plasma-deposited silicon nitride films from 1,1,3,3,5,5-hexamethylcyclotrisilazane

Abstract: Articles you may be interested inThe influence of underlying metals on the hydrogen evolution from plasmadeposited silicon nitride films J. Appl. Phys. 71, 958 (1992); 10.1063/1.351321Structure and optical properties of plasmadeposited fluorinated silicon nitride thin films

Cited by 24 publications

References 31 publications

Tris(diethylamino)silane—A new precursor compound for obtaining layers of silicon carbonitride

Tris(diethylamino)silane—A new precursor compound for obtaining layers of silicon carbonitride

From organosilicon precursors to multifunctional silicon carbonitride

Surface reactions of aminosilane precursors during N2 plasma‐assisted atomic layer deposition of SiNx

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Surface reactions of aminosilane precursors during N₂ plasma‐assisted atomic layer deposition of SiN_x