Deposition kinetic of airborne organic contamination on wafers measured by TD-GC/MS

Veillerot, M.; Danel, Adrien; Cetre, Sylviane; Tardif, François J.

doi:10.1016/s0921-5107(02)00628-1

Cited by 17 publications

(19 citation statements)

References 3 publications

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“…As compared to the results of Veillerot et al [14] where the values of were and for DEP and DBP, respectively, for the exposure duration of 24 h under a vertical air flow velocity of , these values were also smaller than most of the ionic contaminants except the ions. Thus one can conclude that the surface deposition tendency of ionic contaminants is much stronger than that of organic contaminants.…”

Section: Determination Of Deposition Velocity and Sticking Coefficmentioning

confidence: 48%

“…In a number of recent studies, the deposition kinetics of several phthalate compounds on silicon wafers have been reported for long exposure periods up to several days [9]- [12]. Besides, the adsorption and desorption rate constants of several organic AMCs have been evaluated based on the actual data from cleanroom ambiences [10], [13], [14].…”

Section: Introductionmentioning

confidence: 99%

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Surface Deposition of Ionic Contaminants on Silicon Wafers in a Cleanroom Environment

Lin

Bai

2009

IEEE Trans. Semicond. Manufact.

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The adsorption and desorption behaviors of ionic micro-contaminants on the silicon wafers in a cleanroom environment were investigated in this study. The experimental measurements showed that the surface density of ionic contaminants was significantly affected by both the exposure time and the properties of contaminants. The rate parameters of a kinetic model for surface deposition were determined by numerical optimization of fitting the experimental data on surface and ambient concentrations of airborne molecular contaminants (AMCs). Subsequently, the time-dependent deposition velocity and sticking coefficient of ionic species were obtained. The results showed that F , Cl , NO 3 , SO 2 4 , Na + , NH + 4 , K + , and Mg 2+ were the major ionic microcontamination species on the wafer surfaces, with the adsorption rate constant and the sticking coefficient of K + ion being larger than those of other ionic contaminants.After the determination of sticking coefficients, the allowable wafer exposure durations and the maximum ambient concentrations of ionic species were exemplified based on the guideline recommended by the International Technology Roadmap for Semiconductors (ITRS).

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Section: Determination Of Deposition Velocity and Sticking Coefficmentioning

confidence: 48%

Section: Introductionmentioning

confidence: 99%

Surface Deposition of Ionic Contaminants on Silicon Wafers in a Cleanroom Environment

Lin

Bai

2009

IEEE Trans. Semicond. Manufact.

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“…Bases: may cause corrosion [2] and timedependent haze on wafers. Condensable organics: they may cause alteration of gate oxide [8], [9], unwanted doping [10], organic haze [8]. Dopants: the main problem caused by this type of AMC is an unwanted n-doping and pdoping [10].…”

Section: Accepted Manuscriptmentioning

confidence: 99%

Validation, improvement and implementation of sorption mathematical models using a quartz crystal microbalance (QCM)

Herrán

Guet²,

Favre³

2016

Microelectronic Engineering

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“…The other seven wafers are placed vertically on Teflon holders and exposed in a LETI class 100 clean-room under the laminar air flow for varying time to obtain different contamination levels. We took advantage of previous works [7] where sticking coefficients of main clean-room contaminants were determined. Wafers are cleaved so that half the wafer is analyzed with W-TDGCMS (contamination from both sides is integrated) and the other half with ToF-SIMS (a centre point is analyzed on the front side, considered as representative for the average surface contamination).…”

Section: Calibration By W-tdgcmsmentioning

confidence: 99%

ToF-SIMS Applications in Microelectronics: Quantification of Organic Surface Contamination

Trouiller¹,

Signamarcheix²,

Juhel³

et al. 2005

AIP Conference Proceedings

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An overview of our main Time-Of-Flight Secondary Ion Mass Spectroscopy (ToF-SIMS) applications is first given that highlights the strengths but also reveals some development needs for this technique especially where it comes to contaminants quantification. In this work, as a step towards better quantified data, we have elaborated a method to quantify Airborne Molecular Contamination (AMC) on Silicon. For this a protocol using liquid nitrogen sample cooling was set up to reduce the desorption of the most volatile species under the Ultra High Vacuum (UHV) of the ToF-SIMS analysis chamber and thus to enable a more stable, reliable and representative measurement. Using this protocol for the ToF-SIMS analysis and a careful analytical sequence, good correlation between Wafer Thermal Desorption Gas Chromatography Mass Spectroscopy (W-TDGCMS) and ToF-SIMS results on wafers exposed for varying time under the clean-room air flow containing 2,2,4-trimethyl 1,3-pentanediol diisobutyrate (TXIB) and Phthalates -two main organic clean-room contaminants -is obtained. Relative Sensitivity Factors (RSF) are deduced. With the used measurement setups, the ToF-SIMS low detection limits (DL) lie around 1E11 -1E12 atoms Carbon/cm² (atC/cm²) depending on species and are comparable to that of W-TDGCMS at 1E11 atC/cm².

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Deposition kinetic of airborne organic contamination on wafers measured by TD-GC/MS

Cited by 17 publications

References 3 publications

Surface Deposition of Ionic Contaminants on Silicon Wafers in a Cleanroom Environment

Surface Deposition of Ionic Contaminants on Silicon Wafers in a Cleanroom Environment

Validation, improvement and implementation of sorption mathematical models using a quartz crystal microbalance (QCM)

ToF-SIMS Applications in Microelectronics: Quantification of Organic Surface Contamination

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