Deposition of a-CN<sub>x</sub>:H Films Using Uniform Supermagnetron Plasma under a Stationary Magnet Field

Abstract

By generating closed-loop electron E × B drift over the front and back surface of a band magnetron cathode, a uniform magnetron plasma can be formed over the front surface. Here, we attempted to generate a uniform supermagnetron plasma under a stationary magnetic field by situating two such band magnetron cathodes face-to-face in parallel. Performing uniform supermagnetron plasma chemical vapor deposition (CVD) with tetraethylorthosilicate (TEOS)/O 2 CVD, SiO 2 films with good uniformity (±5%) at the central region of the cathode could be achieved under a stationary magnetic field of about 160 G. Using this supermagnetron plasma CVD apparatus, a-CN x :H films were then deposited to investigate their characteristics using isobutane (i-C 4 H 10)/N 2 mixed gases. A relatively high deposition rate of about 100 nm/min was obtained. The a-CN x :H films obtained had a hardness of about 25 GPa, higher than that of glass (22 GPa).

Chemical vapor deposition of a-CNx:H films for electron field emission using band supermagnetron plasma

“…The supermagnetron plasma becomes very dense at an rf phase difference of 180°, which is suited to uniform deposition by rotating a magnetic field parallel to the cathode or by using a band-type magnetron cathode under a stationary magnetic field [17]. Using these plasma CVD apparatuses, the high-rate and uniform deposition of a-CN x :H films can be achieved.…”

N2 or H2/Isobutane Supermagnetron Plasma Chemical Vapor Deposition of Hydrogenated Amorphous CNx Films for Application to Elementary Amorphous CNx:H/p-Si Photovoltaic Cell

“…[1][2][3][4][5][6][7][8][9][10] In these films, both the optical and electrical properties, as well as the mechanical properties, can be modified by nitrogen incorporation; i.e., they become hydrogenated amorphous carbon nitride (a-CN x :H) films. [11][12][13][14][15][16] a-CN x :H films sometimes show high electroconductivity when nitrogen atoms are doped in the films. Substrate temperature and intrinsic compressive stress in the films are important factors in the application of these films to electronic devices.…”