Deposition of Alumina Films on Si (1 0 0) Substrate Using a Low Energy Dense Plasma Focus Device

Ghareshabani, Eslam; Sobhanian, S.

doi:10.1007/s10894-016-0075-0

Cited by 3 publications

(3 citation statements)

References 29 publications

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“…15,16 Hence, postdeposition annealing at 1100−1150 °C has been employed to obtain α-Al 2 O 3 in thin films. 17,18 The phasetransition temperature has been reduced to 950−1050 °C using dispersed α-Al 2 O 3 particles on the top of amorphous films to initiate transition to α-Al 2 O 3 phase in the films. 19 Even more easily, α-Al 2 O 3 can be obtained on appropriate seed layers where the Al 2 O 3 films are deposited on.…”

Section: ■ Introductionmentioning

confidence: 99%

“…The substrate temperatures ( T G ) that are required to grow crystalline films of alumina on most common substrate materials may exceed 1000 °C. Unfortunately, even at these temperatures, the corundum-type α-Al 2 O 3 showing the best mechanical properties has not always been formed. , Hence, postdeposition annealing at 1100–1150 °C has been employed to obtain α-Al 2 O 3 in thin films. , The phase-transition temperature has been reduced to 950–1050 °C using dispersed α-Al 2 O 3 particles on the top of amorphous films to initiate transition to α-Al 2 O 3 phase in the films . Even more easily, α-Al 2 O 3 can be obtained on appropriate seed layers where the Al 2 O 3 films are deposited on.…”

Section: Introductionmentioning

confidence: 99%

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Low-Temperature Atomic Layer Deposition of α-Al₂O₃ Thin Films

Aarik

Mändar

Ritslaid

et al. 2021

Crystal Growth & Design

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The atomic layer deposition of Al 2 O 3 films on Si(100) and α-Cr 2 O 3 was studied. The films were grown via AlCl 3 -H 2 O, AlCl 3 -O 3 , Al(CH 3 ) 3 -H 2 O, and Al(CH 3 ) 3 -O 3 processes at 300−750 °C. The films deposited from AlCl 3 and H 2 O at temperatures ≥ 400 °C on α-Cr 2 O 3 contained the corundum phase of alumina (α-Al 2 O 3 ). The densities and refractive indices of the α-Al 2 O 3 films were close to the corresponding values of single-crystal α-Al 2 O 3 and exceeded markedly those of amorphous Al 2 O 3 . The α-Al 2 O 3 phase was also obtained in the films deposited at 450 °C on α-Cr 2 O 3 from AlCl 3 and O 3 and from Al(CH 3 ) 3 and H 2 O. However, the crystallinity, densities, and refractive indices of the latter films were lower than those of the films deposited at 450 °C on α-Cr 2 O 3 from AlCl 3 and H 2 O. Etching in hot (110 °C) 80% H 2 SO 4 was used to characterize the chemical resistance of the films in aggressive environments. The etching rate of α-Al 2 O 3 deposited at 450−750 °C was more than 1000 times lower than that of predominantly amorphous Al 2 O 3 , and also lower than those of the films that were grown on Si(100) at 750 °C and contained γ-Al 2 O 3 , δ-Al 2 O 3 , and/or θ-Al 2 O 3 .

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Section: ■ Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Low-Temperature Atomic Layer Deposition of α-Al₂O₃ Thin Films

Aarik

Mändar

Ritslaid

et al. 2021

Crystal Growth & Design

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“…Progress in such research has stimulated ion-beam emission studies in areas of material science, the ion-beam source motivating research applications in for instance surface modification [ 32 , 33 ], ion implantation [ 34 , 35 ], thin-film deposition [ 36 , 37 ], semiconductor doping [ 38 ], synthesis of nanoparticles [ 39 ], amorphization of silicon [ 40 ], Nanostructuring of FePt thin films [ 41 ] and formation of nanoparticle [ 42 ]. While many ion-beam measurement and diagnostic techniques have been developed, most particularly in seeking to characterize ion-beam emission, challenges continue to remain in clarifying the various emission complexities.…”

Section: Introductionmentioning

confidence: 99%

Time-resolved characteristics of deuteron-beam generated by plasma focus discharge

2018

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The plasma focus device discussed herein is a Z-pinch pulsed-plasma arrangement. In this, the plasma is heated and compressed into a cylindrical column, producing a typical density of > 1025 particles/m3 and a temperature of (1–3) × 107 oC. The plasma focus has been widely investigated as a radiation source, including as ion-beams, electron-beams and as a source of x-ray and neutron production, providing considerable scope for use in a variety of technological situations. Thus said, the nature of the radiation emission depends on the dynamics of the plasma pinch. In this study of the characteristics of deuteron-beam emission, in terms of energy, fluence and angular distribution were analyzed. The 2.7 kJ plasma focus discharge has been made to operate at a pressure of less than 1 mbar rather than at its more conventional operating pressure of a few mbar. Faraday cup were used to determine deuteron-beam energy and deuteron-beam fluence per shot while CR-39 solid-state nuclear track detectors were employed in studying the angular distribution of deuteron emission. Beam energy and deuteron-beam fluence per shot have been found to be pressure dependent. The largest value of average deuteron energy measured for present conditions was found to be (52 ± 7) keV, while the deuteron-beam fluence per shot was of the order of 1015 ions/m2 when operated at a pressure of 0.2 mbar. The deuteron-beam emission is in the forward direction and is observed to be highly anisotropic.

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Experimental investigation and simulation of penetration depth of nitrogen ions emitted by plasma focus device inside titanium samples

Seyedhabashi,

Ebrahimi,

Rostamifard

et al. 2023

Results in Physics

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Deposition of Alumina Films on Si (1 0 0) Substrate Using a Low Energy Dense Plasma Focus Device

Cited by 3 publications

References 29 publications

Low-Temperature Atomic Layer Deposition of α-Al₂O₃ Thin Films

Low-Temperature Atomic Layer Deposition of α-Al₂O₃ Thin Films

Time-resolved characteristics of deuteron-beam generated by plasma focus discharge

Experimental investigation and simulation of penetration depth of nitrogen ions emitted by plasma focus device inside titanium samples

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Deposition of Alumina Films on Si (1 0 0) Substrate Using a Low Energy Dense Plasma Focus Device

Cited by 3 publications

References 29 publications

Low-Temperature Atomic Layer Deposition of α-Al2O3 Thin Films

Low-Temperature Atomic Layer Deposition of α-Al2O3 Thin Films

Time-resolved characteristics of deuteron-beam generated by plasma focus discharge

Experimental investigation and simulation of penetration depth of nitrogen ions emitted by plasma focus device inside titanium samples

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Product

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Low-Temperature Atomic Layer Deposition of α-Al₂O₃ Thin Films

Low-Temperature Atomic Layer Deposition of α-Al₂O₃ Thin Films