Deposition of bismuth sulfide and aluminum doped bismuth sulfide thin films for photovoltaic applications

Engineering the optical properties of nickel sulphide thin films by zinc integration for photovoltaic applications

“…The addition of EDTA in the aqueous solution of Ni(NO 3 ) 3 -$6H 2 O resulted in the formation of a four-membered ring of nickel chelate with EDTA complex, as shown in Fig. 1 and eqn (2).…”

“…With increasing population, the resultant growing need of energy demands the employment of alternative energy resources as a sustainable solution to cope with the issues. 1,2 Rapid industrialization has also worsened this situation by escalating pollution, 3 thereby nding renewable energy sources is the best options to deal with the scenario. 4 Among the renewable energy resources, solar cells can be a smart choice.…”

Controlled synthesis of photoresponsive bismuthinite (Bi2S3) nanostructures mediated through a new 1D bismuth-pyrimidylthiolate coordination polymer as a molecular precursor

“…Bulk Bi 2 S 3 features a narrow band gap of 1.4 eV. 45 This feature of Bi 2 S 3 , when combined with its high absorption coefficient (10 −4 to 10 −6 cm −1 ), 46 makes it a fine candidate for optoelectronics, photovoltaics, and a good photocatalyst that is able to perform in the visible range of the solar spectrum. Keeping in mind the importance of optical band gaps in nanoelectronics, the optical properties of Bi 2 S 3 nanostructures were investigated by diffuse reflectance spectroscopy (DRS) and the optical band gaps of these materials were determined by plotting the Kubelka–Munk function, F ( R ), as given in the following equation:[ F ( R ) hν ] n = A ( hν − E g )where hν is the photon energy, A is a constant, E g denotes the band gap, and n depends on the nature of the optical transition.…”

Improvement in Optoelectronic Properties of Bismuth Sulphide Thin Films by Chromium Incorporation at the Orthorhombic Crystal Lattice for Photovoltaic Applications

“…D block metals have high stability when used as dopants, decreasing semiconductor materials’ photo-corrosion restrictions. By causing reticular distortions in the semiconductor lattice, transition metals increase the percentage of faults, resulting in improved electron hole charge separation efficiency [ 29 , 30 , 31 , 32 ]. The dopant concentration and distribution, as well as the electron configuration and metal ion-electron donor density, all play roles in deciding the fate of the designed semiconductors [ 33 , 34 , 35 ].…”