1993
DOI: 10.1016/0925-8388(93)90743-7
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Deposition of buffer layers for MOCVD of Y1Ba2Cu3O7−x on GaAs

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1993
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Cited by 11 publications
(9 citation statements)
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“…Magnesium oxide (MgO) thin films have attracted great scientific and technological interest in recent decades because of high MgO chemical and thermal stability (melting point = 2900 °C), a wide band gap (7.2 eV), and a low dielectric constant (9.8) and refractive index, as well as excellent thermal conductance and diffusion barrier properties . This material has often been used for the production of protective coatings of dielectrics , and as buffer layers for superconducting or perovskite ferroelectric thin films. …”
Section: Introductionmentioning
confidence: 99%
“…Magnesium oxide (MgO) thin films have attracted great scientific and technological interest in recent decades because of high MgO chemical and thermal stability (melting point = 2900 °C), a wide band gap (7.2 eV), and a low dielectric constant (9.8) and refractive index, as well as excellent thermal conductance and diffusion barrier properties . This material has often been used for the production of protective coatings of dielectrics , and as buffer layers for superconducting or perovskite ferroelectric thin films. …”
Section: Introductionmentioning
confidence: 99%
“…In addition, ZnEt 2 shows undesired pre-reactions and hence decomposition by the deposition of particulates, upstream from the heating element may occur during the precursor delivery. 32,39,43 For MgO lm formation, bis(cyclopentadienyl) magnesium, 25,44 alkylmagnesium alkoxides, 45,46 magnesium carboxylates, 47,48 magnesium b-ketoiminates, 49 magnesium bdiketonates 26 and their diamine adducts 12,50,51 are usually used as CVD precursors of which the latter ones are promising CVD candidates, due to their high volatility, good stability in the condensed and gas phase, and their straightforward synthetic procedure. 12,50,51 In contrast, as spin-coating precursors mainly magnesium acetate tetrahydrate or zinc acetate dihydrate were used for the formation of the respective metal oxide layers.…”
Section: Introductionmentioning
confidence: 99%
“…MgO is an important metal oxide dielectric material used as a buffer layer in superconductor and ferroelectric materials [11][12][13]. Due to its absorption property, this material attracts its use as humidity sensors [14].…”
Section: Introductionmentioning
confidence: 99%