Deposition of c-BN films in a hollow cathode arc evaporation device

Barth, Karl; Neuffer, A.; Ulmer, Jochen; Lunk, A.

doi:10.1016/0925-9635(96)00544-4

Cited by 13 publications

(9 citation statements)

References 19 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Various chemical vapor deposition ͑CVD͒ and physical vapor-phase ͑PVD͒ deposition techniques, such as plasmaenhanced CVD, 1,2 magnetron sputtering, 3 pulsed-laser deposition, 4 ion-beam assisted deposition, 5,6 or reactive evaporation, 7 have been successfully used for deposition of BN thin films. Extensive work was reported on modification of the deposition method and selection of optimum-growth conditions for the preparation of high-quality c-BN thin films.…”

Section: Introductionmentioning

confidence: 99%

In situ infrared and visible-light ellipsometric investigations of boron nitride thin films at elevated temperatures

Franke

Schubert

Hecht

et al. 1998

Journal of Applied Physics

View full text Add to dashboard Cite

In situ infrared ͑IR͒ spectroscopy and visible-light ͑VIS͒ spectroscopic ellipsometry over the spectral range from 700 to 2000 cm Ϫ1 and 1.5-3.5 eV, respectively, were used to investigate the optical behavior of boron nitride ͑BN͒ thin films at temperatures from room temperature ͑RT͒ to 600°C. The polycrystalline hexagonal ͑h͒ and mixed-phase h-and cubic (c)-BN thin films were deposited by magnetron sputtering on ͓001͔ silicon. We observe a reversible moisture incorporation process in as-grown h-BN samples. When stored in normal ambient, the h-BN thin films absorb water into thin-film micropores. When annealed in ultrahigh vacuum or a dry nitrogen atmosphere, the samples expel moisture but retain their microstructure. This is observable by reduction of the thin-film refractive indices in accordance with changes in the IR lattice resonance behavior. The optical properties of high c-BN content thin films remain unchanged during annealing. And both intrinsic h-and c-BN thin-film VIS refractive indices are nearly temperature independent, at least up to 600°C. Therefore, RT BN optical constants can be used for feedback loop control in in situ thin-film growth at temperatures up to 600°C. ͓S0021-8979͑98͒07613-0͔

show abstract

Section: Introductionmentioning

confidence: 99%

In situ infrared and visible-light ellipsometric investigations of boron nitride thin films at elevated temperatures

Franke

Schubert

Hecht

et al. 1998

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

“…[1][2][3][4][5][6][7] The microstructure of polycrystalline BN thin films usually consists of mixtures of c-(sp 3 -bonded, zincblende structure͒ and h-(sp 2 -bonded, graphite-like structure͒ BN as has been reported from high-resolution transmission electron microscopy ͑HRTEM͒ in combination with selected area electron diffraction ͑SAD͒. 8,9 The c-axis orientations of the h-BN grains ͑grain size: 20-50 nm͒ within pure-phase thin films depend on the growth parameters.…”

Section: Introductionmentioning

confidence: 99%

Phase and microstructure investigations of boron nitride thin films by spectroscopic ellipsometry in the visible and infrared spectral range

Franke

Schubert

Neumann

et al. 1997

Journal of Applied Physics

View full text Add to dashboard Cite

Frank, "Phase and microstructure investigations of boron nitride thin films by spectroscopic ellipsometry in the visible and infrared spectral range" (1997 Spectroscopic ellipsometry over the spectral range from 700 to 3000 cm Ϫ1 and from 1.5 to 3.5 eV is used to simultaneously determine phase and microstructure of polycrystalline hexagonal and cubic boron nitride thin films deposited by magnetron sputtering on ͑100͒ silicon. The results are obtained from a single microstructure-dependent model for both infrared and visible-light thin-film anisotropic dielectric functions. The optical behavior of high c-BN content thin films is described by an effective medium approximation. We obtain the amount of h-BN within high c-BN content thin films. A thin oriented nucleation layer between the silicon substrate and the high c-BN content layer is demonstrated. The preferential arrangement of the grain c axes within the h-BN thin films are found to be dependent on the growth parameters. The results from the infrared and visible spectral range ellipsometry model are compared to each other and found to be highly consistent. © 1997 American Institute of Physics. ͓S0021-8979͑97͒06618-8͔

show abstract

“…The influence of the fluorine flow rates at different temperatures is shown in more detail in the Figure 1b. The parameters used in Figure 1b and in the following figures are related to the experimental conditions, which are realized in one of our experimental devices 16. Figure 1b shows that the formation of BN depends very sensitively on the temperature and the fluorine content.…”

Section: Resultsmentioning

confidence: 99%

“…In the deposition device described previously, [16] the influence of fluorine and fluorine-hydrogen mixture on growth rate of c-BN was investigated. Figure 4 shows the result of the experiments.…”

Section: Resultsmentioning

confidence: 99%

Kinetic Modelling of Plasma Activated BN‐Film Deposition in the System B‐N‐H‐F

Matheis¹,

Panowitz²,

et al. 2009

Plasma Processes & Polymers

Self Cite

View full text Add to dashboard Cite

The paper presents for the Ar/B/N/H/X‐system (X = F, Br) thermodynamic calculations of the mole fraction at equilibrium conditions and kinetic modelling of the BN‐growth at plasma‐activated chemical deposition. Modelling was performed with the software CHEMKIN® 4.1. The data of different databases (NASA, JANAF, NIST) are used in the thermodynamic equilibrium modelling and the results are compared among each other and also with results from the literature. Kinetic modelling is focused on the system Ar/B/N/F/H to find out the influence of nitrogen, fluorine and the plasma power on the BN‐growth rate. The data received by modelling are compared qualitatively with experimental results in c‐BN‐deposition and ‐etching.

show abstract

Deposition of c-BN films in a hollow cathode arc evaporation device

Cited by 13 publications

References 19 publications

In situ infrared and visible-light ellipsometric investigations of boron nitride thin films at elevated temperatures

In situ infrared and visible-light ellipsometric investigations of boron nitride thin films at elevated temperatures

Phase and microstructure investigations of boron nitride thin films by spectroscopic ellipsometry in the visible and infrared spectral range

Kinetic Modelling of Plasma Activated BN‐Film Deposition in the System B‐N‐H‐F

Contact Info

Product

Resources

About