Deposition of copper by using self-sputtering

Fu, Jianming; Ding, Peng; Dorleans, Fernand; Xu, Zheng; Chen, Fusen

doi:10.1116/1.581950

Cited by 32 publications

(13 citation statements)

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“…A typical direct current (dc) planar magnetron operates at a pressure of 1 -10 mTorr with a magnetic field strength of 0.01 -0.1 T and at cathode potentials 300 -700 V. This leads to current densities below 100 mA cm -2 and power densities of up to 50 W cm -2 [19,23]. For special designs, giving improved cooling, such as rotating cylindrical target with a fixed magnetic assembly [24] and rotating magnet assembly [25], or the use of increased cooling [26,27], higher current densities can be achieved. The cathode current voltage characteristics are found to follow the relationship Id = kdVd n (11) where Id is the cathode discharge current and Vd the cathode voltage and n is in the range between 3 and 15 [23,28].…”

Section: Magnetron Sputteringmentioning

confidence: 99%

“…It is possible to deposit thin films by magnetron sputtering without the use of an inert sputtering gas. This technique is referred to as self-sustained sputtering (SSS) [25,26,99,100] and makes use of an inert gas to ignite the plasma, after which the inert gas is removed and the sputtering continues with ions of the deposition (sputtered) material. The technique has found applications in semiconductor metallization and filling high aspect ratio holes and grooves with single [101] or dual [102] element content.…”

Section: Self-sustained Sputtering (Sss)mentioning

confidence: 99%

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Ionized physical vapor deposition (IPVD): A review of technology and applications

et al. 2006

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In plasma-based deposition processing, the importance of low-energy ion bombardment during thin film growth can hardly be exaggerated. Ion bombardment is an important physical tool available to materials scientists in the design of new materials and new structures. Glow discharges and in particular the magnetron sputtering discharge have the advantage that the ions of the discharge are abundantly available to the deposition process. However, the ion chemistry is usually dominated by the ions of the inert sputtering gas while ions of the sputtered material are rare. Over the past few years, various ionized sputtering techniques have appeared that can achieve a high degree of ionization of the sputtered atoms, often up to 50 % but in some cases as much as approximately 90%. This opens a complete new perspective in the engineering and design of new thin film materials. The development and application of magnetron sputtering systems for ionized physical vapor deposition (IPVD) is reviewed. The application of a secondary discharge, inductively coupled plasma

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Section: Magnetron Sputteringmentioning

confidence: 99%

Section: Self-sustained Sputtering (Sss)mentioning

confidence: 99%

Ionized physical vapor deposition (IPVD): A review of technology and applications

et al. 2006

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“…4,5 IPVD combines a conventional magnetron 6 with internal or external coils to ionize the sputtered metal and an rf bias source at the wafer to impart energy to ions. A minimum coverage of the features by the Cu seed is needed for successful electroplating ͑voidless Cu fill of feature͒.…”

Section: Introductionmentioning

confidence: 99%

Comparing ionized physical vapor deposition and high power magnetron copper seed deposition

Stout

Zhang

Rauf

et al. 2002

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Articles you may be interested inFlux and energy analysis of species in hollow cathode magnetron ionized physical vapor deposition of copper Rev. Sci. Instrum. 81, 123502 (2010); 10.1063/1.3504371Plasma and process characterization of high power magnetron physical vapor deposition with integrated plasma equipment-feature profile model A computational modeling comparison is made between ionized physical vapor deposition ͑IPVD͒ and high power magnetron ͑HPM͒ deposition of copper. For the comparison the point of view of the feature scale is stressed where the two reactors are distinguishable by the magnitude and ratio of specie (Cu,Cu a ,Cu ϩ ,Ar ϩ ) flux, the angular distribution of the specie, and the energy of the ions incident on the feature surface. The HPM is characterized for the conditions studied by a metal flux content made up almost entirely of copper athermals, an Ar ϩ ion flux about four times the Cu metal flux, decreasing Cu ϩ fraction and increasing Cu athermal flux to surface with increasing target power, and both no sputter and sputter regimes at the wafer possible. The IPVD reactor is characterized for the conditions studied by a Cu metal flux with a large neutral fraction but significant ions and athermals, an Ar ϩ ion flux on the order of the Cu metal flux, and only a sputter regime at the wafer possible. An increase in target power increases the deposition rate and decreases the Cu ϩ fraction in both systems. In IPVD the bottom coverage increases and the side wall coverage decreases due to a decrease in the sputter rate and an increase in the Cu neutral and athermal fraction. In HPM bottom coverage is reduced with increasing target power due to the lower Cu ϩ fraction. An increase in wafer power decreases the deposition rate in both systems by increasing the sputter rate. A lower ion current to the wafer for IPVD versus HPM gives the ions a higher energy at the wafer for the same power. In HPM lower energy ions are sufficient for the same sputtering rate versus IPVD due to the higher ion/neutral fraction. With no wafer bias HPM has thicker bottom versus IPVD since no sputtering of the feature bottom is occurring and the more focused athermals ͑versus neutrals͒ are less shadowed to the feature bottom. The IPVD side wall deposits have more thickness variation than HPM due to the large Cu neutral component in IPVD. An increase in wafer power increases side wall coverage and decreases feature bottom coverage in both systems as metal deposited at feature bottom is redeposited to the sidewalls. For increased coil power in IPVD the Cu ϩ fraction increases and the Cu neutral fraction decreases. Both bottom and side wall coverage increase as more Cu enters the feature as focused ions.

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“…An integrated reactor/feature scale model has been applied to a high-power magnetron (HPM) source for Cu seed deposition [1]. The reactor model used is HPEM [2], which is being developed at the University of Illinois.…”

mentioning

confidence: 99%

High-power magnetron Cu seed deposition on 3-D dual inlaid features

Stout

Zhang

2002

IEEE Trans. Plasma Sci.

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Cu seed deposition is an important step before electroplating when filling trenches and vias for interconnect manufacture. An integrated reactor to feature scale model has been applied to a high-power magnetron (HPM) source for Cu seed deposition. Images of the resulting Cu seed coverage on a canonical dual inlaid feature using the HPM source are presented. The dominant deposition specie is the Cu athermal, which has a broad angular distribution. The deposition results predict rounded profiles and via bottom and cusp formation at trench and via tops due to geometric shadowing of the Cu athermals. Index Terms-Copper deposition, dual inlaid, magnetron.A S CRITICAL dimensions shrink, aspect ratios increase, and transistor counts increase, manufacturing interconnects becomes an increasing challenge. Modeling can provide knowledge and a physical basis to help speed process development time for the interconnect manufacturing process. Part of the manufacturing process requires deposition of a copper "seed" (thin layer) onto trench and via structures prior to completely filling the structures with copper using an electroplating process. Modeling results for Cu seed deposition on a three-dimensional (3-D) dual inlaid feature used in interconnect manufacture will be discussed.An integrated reactor/feature scale model has been applied to a high-power magnetron (HPM) source for Cu seed deposition [1]. The reactor model used is HPEM [2], which is being developed at the University of Illinois. The feature scale model used is Papaya which is being developed at Motorola [3], Austin, TX. Papaya is a 3-D Monte Carlo (MC) model. The feature model tracks changes to a configuration of "pseudoparticles" in a "lattice" due to events on the surface. The inputs to the feature model (Papaya) calculated by the reactor model (HPEM) are the "atomic sources" which have an identity (Ar , Cu, Cu , and Cu.athermals), a flux rate (#/cm s), an angular distribution, and an energy distribution.The "atomic source" or "particles" are introduced at a "source plane" above the defined feature and their paths are tracked to the feature surface. Once a particle hits the feature surface, various processes occur depending on the particle's identity, energy, angle of incidence, and the material it hits. For instance, an Ar ion hitting the surface is not allowed to adsorb but may sputter material from the feature surface. The sputter rate depends on the material hit, the angle of incidence, and the energy of the Ar ion. The physical processes included in the fea-).Publisher Item Identifier S 0093-3813(02)03073-4. ture model are specie transport, adsorption, surface diffusion, reflection (diffusive, specular), energy loss, etch, sputter, and growth. The lattice is assumed to be face centered cubic (FCC) and is three-dimensional. The thermal accommodation coefficients, sticking coefficients, and sputter yields are functions of angle, energy, specie, and material [4].For the operating regime of the HPM considered here, the "atomic source" to the feature surface i...

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Deposition of copper by using self-sputtering

Cited by 32 publications

References 7 publications

Ionized physical vapor deposition (IPVD): A review of technology and applications

Ionized physical vapor deposition (IPVD): A review of technology and applications

Comparing ionized physical vapor deposition and high power magnetron copper seed deposition

High-power magnetron Cu seed deposition on 3-D dual inlaid features

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