Deposition of Cu-doped PbS thin films with low resistivity using DC sputtering

Soetedjo, Hariyadi; Siswanto, Bambang; Aziz, Ihwanul; Sudjatmoko,

doi:10.1016/j.rinp.2018.01.020

Cited by 14 publications

(8 citation statements)

References 12 publications

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“…This is an indication that Zn 2+ is placed in the Pb vacant or substitutional sites rather than interstitial sites to form substation solid solution of Zn: PbS. Similar effect was reported for Cd 2+ -doped thin films [20], Sr-doped PbS [29], Cu-doped PbS thin film [30]. Also, the average grain size of the prepared thin film was calculated using the Debye-Scherrer equation [28,31] (3)…”

Section: Structural Characterizationsupporting

confidence: 57%

“…The increase in optical bandgap could also be related to the structural deformation in the PbS film caused due to substitutional defect as a result of the replacement of Pb 2+ in the PbS lattice by Zn 2+ leading to a reduction in grain size that causes an increase in energy bandgap. The decrease in semiconductor grain size accompanied by the shift of the absorption edge and increase in bandgap may also be due to quantum confinement effect [30,37,38]. The bandgap values (0.53-1.65 eV) obtained matches the energy bandgap for maximum absorption of solar radiation.…”

Section: Optical Characterizationsupporting

confidence: 54%

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Effects of Zn doping concentration on the optical and photovoltaic properties of ZnxPb1−xS thin film-based solar cell prepared by chemical spray pyrolysis

et al. 2020

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The metal dopants in PbS thin films make a significant impact on its optical and electronic transport properties that make it useful for photovoltaic and other optoelectronic applications. The photovoltaic properties of Zn-doped nanostructured PbS thin films synthesized from zinc acetate, lead acetate, and thiourea as an absorber layer prepared using chemical spray pyrolysis were investigated. Rutherford backscattering spectroscopy (RBS), X-ray diffraction (XRD), and UV-visible spectrophotometry techniques were used to obtain stoichiometry, thickness, structural, and optical properties of the thin films before fabrication of Zn-PbS/CdS solar cell. The RBS revealed the stoichiometry ratio as Zn x Pb 1−x S and thickness range of 189.05-251.64 (10 15 atoms/cm 2). The inclusion of the Zn dopant drastically reduced the concentration of lead from the initial 40.93-14.95%. Optical analysis of the films gave high optical absorption and relatively low reflectance from visible toward the NIR region. An increase in energy bandgap was observed with Zn dopants inclusion from 0.53 to 1.65 eV, which fits the path of the solar radiation for maximum absorption. Photovoltaic properties revealed from the J-V measurement confirmed that Zn-doped sample 6% ZnAcet thin film solar cell gave a maximum short-circuit current density (J sc) of 17.30 mA/cm 2 , open-circuit (V oc) 390 mV, fill factor (FF) 0.48, and conversion efficiency (η) of 2.7%.

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Section: Structural Characterizationsupporting

confidence: 57%

Section: Optical Characterizationsupporting

confidence: 54%

Effects of Zn doping concentration on the optical and photovoltaic properties of ZnxPb1−xS thin film-based solar cell prepared by chemical spray pyrolysis

et al. 2020

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“…For all samples, the variation of is in accordance with that in crystallite size. The lattice constant 'a' of the cubic rock salt has been computed for each peak using the formula [11].…”

Section: Structural Characterizationmentioning

confidence: 99%

“…There are few reports of PbS gas sensors which can work at moderate operating temperatures unlike commonly used metal oxide gas sensors in the range 200 to 650 °C as their operating temperatures [8,9]. It is well known that among different preparation techniques such as SILAR [10], Sputtering [11], Spray Pyrolysis [12] etc. the method of chemical bath deposition (CBD) is the most inexpensive technique for PbS thin films which is based on the reaction of the species on the substrate surface from aqueous solutions [13,14].…”

Section: Introductionmentioning

confidence: 99%

Effect of Deposition Time on Structural and Optoelectronic Properties of Flower-Like Nanostructured PbS Thin Films

Sheeba¹,

Namitha²,

Ramsiya³

et al. 2021

J. Sci. Res.

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Polycrystalline nanostructured PbS thin ﬁlms are deposited onto soda-lime glass substrates by the method of chemical bath deposition (CBD) at different duration of deposition time. The structure and surface morphology of the ﬁlms are characterized by X-ray diﬀraction (XRD) and field effect scanning electron microscopy (FE-SEM). XRD pattern exhibits polycrystalline structure with preferential orientation along (200) direction, parameters such as crystallite size, lattice constant, lattice-strain and dislocation density are calculated. The FE-SEM images show appearance of flower like structure on formation of PbS films which is indicative of suitability in gas sensing applications. Studies on optical properties carried out by UV-Vis spectroscopy measurements show bandgap in the range 1.65eV – 1.41eV. The photoluminescence spectra of the films exhibit two peaks centered at around 613 nm and 738 nm after excitation at 450 nm. Electrical studies from Hall measurements indicate the carrier concentration and mobility of the PbS samples corroborate the variations in the conductivity.

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“…Üretilen PbS ince filmlerin XRD analizleri Üretilen PbS ince filmlerin tercihli yönelimini belirlenmesi için yapılanma katsayısı TC (Texturecoefficient) kullanıldı. Eğer yapılanma katsayısı değeri 1'den büyük bir den fazla yansıma düzlemi mevcut ise, tek bir tercihli yönelimden bahsedilemez[29]. Üretilen PbS ince filmlerin yapılanma katsayısı değeri, herhangi bir (hkl) yansıma düzlemi için Denklem 7 kullanılarak Tablo 1 incelendiğinde tavlama işleminden sonra yapılanma katsayısı değeri 1'den büyük tek bir yansıma düzleminin mevcut olduğu görüldü.…”

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Kimyasal Banyo Depolama Yöntemi ile Üretilen PbS İnce Filmleri Üzerine Tavlamanın Etkileri

Yıldırım

2020

Fırat Üniversitesi Mühendislik Bilimleri Dergisi

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Bu çalışmada hem sodyum sülfit kullanılarak hem de sodyum sülfit kullanılmadan kimyasal banyo depolama metodu ile PbS ince filmleri üretilmiştir. Üretilen filmler 400 °C'de tavlanmıştır. Tavlanan PbS ince filmlerin karakterizasyonu taramalı elektron mikroskobu (SEM) ve X-ışını kırınımı (XRD) yöntemleri kullanılarak gerçekleştirilmiştir. XRD verilerinden, tavladıktan sonra pik şiddetlerinin arttığı gözlenmiştir. Tavlama ile filmlerin yüzey yapılarının tamamen değiştiği ve deliklerin kaybolduğu gözlenmiştir.

show abstract

Deposition of Cu-doped PbS thin films with low resistivity using DC sputtering

Cited by 14 publications

References 12 publications

Effects of Zn doping concentration on the optical and photovoltaic properties of ZnxPb1−xS thin film-based solar cell prepared by chemical spray pyrolysis

Effects of Zn doping concentration on the optical and photovoltaic properties of ZnxPb1−xS thin film-based solar cell prepared by chemical spray pyrolysis

Effect of Deposition Time on Structural and Optoelectronic Properties of Flower-Like Nanostructured PbS Thin Films

Kimyasal Banyo Depolama Yöntemi ile Üretilen PbS İnce Filmleri Üzerine Tavlamanın Etkileri

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